Graphite susceptor

High process temperatures generally not achievable by other means are possible when induction heating of a graphite susceptor is combined with the use of low conductivity high temperature insulation such as flake carbon interposed between the coil and the susceptor. Temperatures of 3000°C are routine for both batch or continuous production. Processes include purification, graphitization, chemical vapor deposition, or carbon vapor deposition to produce components for the aircraft and defense industry. Figure 7 illustrates a furnace suitable for the production of aerospace brake components in a batch operation. 

CVD of SiC normally uses silane and a hydrocarbon as the precursor gases and a hydrogen carrier gas. The gases pass over a heated graphite susceptor that is coated by SiC or tantalum carbide (TaC). 

A silane-based CVD reactor suitable for performing high-temperatnre anneals in an Si- rich ambient was used for these experiments [86]. The samples were placed on a SiC-coated graphite susceptor and an RF induction coil used to heat the susceptor to temperatures on the order of 1,600-1,800°C. Silane and argon were the two process gases used, where Ar not only serves as a dilutant gas but also as a carrier gas to transport silane molecules to the crystal surface. All the implant annealing experiments were performed at atmospheric pressure. 

AC voltage was applied to the substrate. The bias voltage was actually appUed between the stainless steel chamber and the graphite susceptor, and the effects of AC and DC bias voltages on film morphology were compared. The process conditions are shown in Table 11.6. 

The substrate is mounted on a graphite susceptor (usually SiC-coated) and a radio frequency (rf) field is used to inductively heat the susceptor. 

Induction-heated muffle furnaces with graphite susceptors are used more seldom. 

Killeen (1992) used a horizontal-flow metalorganic CVD reactor with trimethylgallium (TMGa) and H2 as the feed gases. When the graphite susceptor was left at room temperature, only absorption from TMGa was observed. When... 

Reactors for conventional thermally activated CVD are of two types cold-wall and hot-wall reactors, respectively internally and externally heated. The disadvantage of a hot-wall reactor is deposition on the wall and partial depletion of reactants leading to nonuniform coatings. A correct reactor geometry and gas inlet manifold can compensate for gas depletion in hot-wall reactors. There is no limit to the form of the objects to be coated, but sizes are restricted. In a cold-wall reactor the substrates to be coated are heated by a graphite susceptor that is inductively heated by an rf generator. Only the hot parts are coated and not the reactor walls, which remain relatively cold. 

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