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Goos-Hanchen shift

For a finite-width beam, the evanescent wave can be pictured as the beam s partial emergence from the solid into the liquid, travel for some finite distance along the surface, and then reentrance into the solid. The distance of propagation along the surface is measurable for a finite-width beam and is called the Goos-Hanchen shift. [Pg.291]

According to Hirschfeld (26) there is a definite relationship between the penetration depth d and the Goos-Hanchen shift D, which is reduced near to the Critical angle 0c to... [Pg.241]

The effective thickness, fgff, takes into account the Goos-Hanchen shift effects and is given by ... [Pg.106]

Figure 18-24. Schematic diagram of the evanescent wave which, when light is totally reflected at a dielectric interface of refractive indices n, and nj. penetrates into phase 2 where it can excite the fluorescence of an antibody (Ab) is the depth of penetration and D the so-called Goos-Hanchen shift. Figure 18-24. Schematic diagram of the evanescent wave which, when light is totally reflected at a dielectric interface of refractive indices n, and nj. penetrates into phase 2 where it can excite the fluorescence of an antibody (Ab) is the depth of penetration and D the so-called Goos-Hanchen shift.
Figure 1.10. Schematic representation of total internal reflection of light at interface of two phases, m >02. Here, / denotes the Goos-Hanchen shift. Figure 1.10. Schematic representation of total internal reflection of light at interface of two phases, m >02. Here, / denotes the Goos-Hanchen shift.
It follows that the closer the angle of incidence is to either the critical angle or the grazing angle, the larger is the Goos-Hanchen shift. [Pg.29]

Hirschfeld [163] attempted to correlate the Goos-Hanchen shift (1.4.11°) with the penetration depth and the effective thickness [Eq. (1.114)]. However, Epstein [164] reexamined the problem and revealed that there is no simple relation between these quantities, because the Goos-Hhnchen shift involves non-homogeneous waves, whereas the penetration depth and the effective thickness are determined as the decay of a homogeneous wave. [Pg.56]

Figure 14.8 ATR principle shown in the case of a Si/Si02/adsorbate/water stack distance I is the so-called Goos—Hanchen shift. Figure 14.8 ATR principle shown in the case of a Si/Si02/adsorbate/water stack distance I is the so-called Goos—Hanchen shift.
White, I. A. and Pask, C. (1977) Effect of Goos-Hanchen shifts on pulse widths in optical waveguides. Appl. Opts., 16, 2353-5. [Pg.202]

Love, J. D. and Winkler, C. (1978) Goos-Hanchen shift for leaky rays on step-index waveguides. Electron. Lett., 14, 379-81. [Pg.708]


See other pages where Goos-Hanchen shift is mentioned: [Pg.293]    [Pg.241]    [Pg.113]    [Pg.28]    [Pg.29]    [Pg.56]    [Pg.367]    [Pg.202]    [Pg.202]    [Pg.293]    [Pg.241]    [Pg.113]    [Pg.28]    [Pg.29]    [Pg.56]    [Pg.367]    [Pg.202]    [Pg.202]   
See also in sourсe #XX -- [ Pg.28 , Pg.56 ]




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