Germanium Hall effect

Kennedy and Benedick [67K02, 68K03] were successful in carrying out difficult Hall effect measurements in germanium samples explosively loaded at the upper end of the elastic range. Nevertheless, the measurements did not provide sufficient information to develop a physical interpretation. 

Another rather large category of acceptors is produced when germanium samples containing group-I or TM elements are annealed at temperatures above 850°C and quenched to RT. From the temperature dependence of the Hall effect, centres produced by this method were labelled as SAi and SA2,... 

Uhlir A.J. The potentials of infinite systems of sources and numerical solutions of problems in semiconductor engineering. Bell Syst. Tech. J. 1955 34 105-128 Valdes L.B. Resistivity measurements on germanium for transistors. Proc. IRE 1954 42 420 27 Van der Pauw L.J. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape. Phil. Res. Rep. 1958 13 1-9... 

Germanium crystals that contain the substitutional triple acceptor copper (Hall and Racette, 1964), as well as hydrogen, exhibit in PTIS a series of broad lines that belong to an acceptor with a ground state at 17.81 meV above the top of the valence band (Haller et al., 1977a). PTIS studies over a range of temperatures have shown that this acceptor has a ls-state that is split into a large number of components that are closely spaced (Kahn et al., 1987). When thermally populated, each of the components of the ls-state manifold acts as an initial state for optical trasitions of the bound hole to one of the effective mass-like excited states. This in turn explains why the lines of this center appear broad. 

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