General Description of Oxide Semiconductor Photoanodes

Tuble 4.1 Pmpcriics oi iiinj Il cnulal mcla) oxide pholoanodcx 

For heavily doped n-type semiconductors, the flat band is nearly coincident with the conduction band, while for heavily doped p-type semiconductors the flat band lies very close to the valence band edge. A necessary thermodynamic condition for the photoproduction of hydrogen and oxygen is that the p-type conduction band must be at or above the H7H2 half cell potential, while n-type valence band must lie below the 02/0H half cell potential. 

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