General Description of Chemical Vapour Deposition Growth Kinetics

5 General Description of Chemical Vapour Deposition Growth Kinetics 

Assuming that the order of the chemical reaction is one, the flux (F2) of the reactant gaseous species consumed on the substrate surface through the heterogeneous reactions is represented by 

Under steady conditions the flux of reactant gaseous species from the bulk of gas to the surface of the substrate is equal to the flux of the reactant gas consumed on the substrate surface, i.e. F, = F2. Then the relationship between CG and Cs is obtained as 

This regime appears at moderate temperatures. Compared with the chemical reaction regime the mass transport rate of the reactant gaseous species is much 

Based on fluid mechanics, the thickness of the concentration boundary layer ( ) is linked with the Schmidt number and expressed by  

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