Optoelectronic gate

Willner, I., Doron, A., and Katz, E. Gated molecular and biomolecular optoelectronic systems via photoisomerizable monolayer electrodes./. Phys. Org. Chem. 1998, II, 546-560. 

For several important applications in plastic optoelectronics, including the possibility of electrically pumped organic lasers, it would be very important to achieve an ambipolar operation in OFETs, with high electron and hole mobilities. Gate-controlled electroluminescence from organic small-molecule thin-film transistors... 

In this Section, we introduce the charge transfer process from photosensitive polymer to SWNTs in the following specific aspects (1) intrinsic charge transport in polymer-coated SWNTs (2) extrinsic effects such as electrostatic gating from photo-generated charges, and photo-gating effect from substrates and (3) device fabrication method and its influence on the optoelectronic properties. 

Figure 3.6 Response of PmPV polymer-coated CVD-grown SWNT-FET device to UV light (A- = 365 nm). (A) The source-drain current (/sd) versus the gate voltage (Kg) of the device in air (Ksd = 1 V) at UV-off (blue curves) and UV-on (red curves) conditions. The reversible hysteresis (forward 7sd -reverse 7sd) in the device measured in the range of 20 V (-10 V to +10 V) at the sweep rate of 4 Hz. The inset shows the polymer-coated CVD-grown SWNT-FET device geometry. (B) Current (7sd) versus time response to UV illumination of PmPV-coated SWNT-FET device in air at room temperature (Fq = 4 V, Fsd = 1 V). The inset shows no apparent recovery in the device conductance after 16 h at fixed Fg conditions. Shaded and unshaded regions mark the UV-on and -off periods, respectively. Reprinted (adapted) with permission from Star, A. et al. Nanotube Optoelectronic Memory Devices. Nano Letters, 2004. 4(9) pp. 1587-1591. Copyright (2004) American Chemical Society.

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