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Gate Technology

Peters, D., et ah, 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications, European Conference on Silicon Carbide and Related Materials, September 1-5, 2002. [Pg.173]

Stefanov Y, Cilek F, Endres R, Schwalke U. Alternative optimization techniques for shallow trench isolation and replacement gate technology CMP. Proceedings of PacRim-CMP 2005. p 51-57. [Pg.367]

Engelhard Corporation, Molecular Gate Technology for Nitrogen Rejection, brochure... [Pg.374]

Lee, J.-H., H. Zhong, Y.-S. Suh, G. Heuss, J. Gurganus, B. Chen, V. Misra. 2002. Tunable work function dual metal gate technology for bulk and non-bulk CMOS. International Electron... [Pg.38]

Ranade, P., Y.-K. Choi, D. Ha, A. Agarwal, M. Ameen, T.-J. King. 2002. Tunable work function molybdenum gate technology for FDSOI-CMOS. International Electron Devices Meeting Technical Digest 363-366. [Pg.39]

The considerable high effort for the hotrunner-valve gate technology is only economical for large production numbers. However, the electromagnetic operation of the needle offers a cost-effective solution due to the elimination of tubing. It should be noted that the temperature limit for electromagnets is around 80 °C. [Pg.36]

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