Gate leakage

Kawase et al. [17] fabricated All-polymer thin film transistors by inkjet printing technique. They used these transistors as active-matrix backplane for information displays. This field has been dominated by amorphous Si TFTs and large liquid crystal displays with an amorphous Si TFT active matrix backplane have been manufactured at a reasonable cost. An organic TFT is expected to reduce the cost even more, and to be applied to flexible displays based on a plastic substrate. The TFT characteristics required for active-matrix displays are (1) sufficient drain cmrent, (2) low off current, (3) low gate leakage current through an insulator, (4) small gate overlap capacitance and (5) uniform characteristics. 

During several experiments it was not possible to improve the eleetrieal ehar-aeteristies of the dieleetrie layer to avoid gate leakage eurrents. Setting up the film thiekness did not solve the problem beeause meehanieal stress led to cracks in the insulating film. 

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