GaN Growth on a SiN Interlayer

The SiN interlayer is deposited in situ on a GaN template at 1030 °C by flowing 100 ppm silane into the growth chamber, while maintaining the ammonia flow (TMG off). The thickness and porosity of the SiN interlayer is controlled by the deposition time [19-22], GaN growth 

Lateral epitaxial overgrowth is widely used in manufacturing to lower the dislocation density in thick GaN layers. In this chapter we explored 

---

Figure 8.12 Cross-sectional transmission electron micrograph of GaN grown on a TiN interlayer. Voids (V) and Ga droplets are observed above as well as beneath the TiN interlayer. Most dislocations in the template are either consolidated at the voids or blocked by the interlayer. Stacking faults (SF) observed in the GaN overgrown layer are likely induced by void-related thermal stress, since no stacking faults or voids are observed in GaN growths on a SiN interlayer...

---