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GalnN Quantum Wells Composition Pulling Effect

FIGURE 2 Layer thickness dependence of PL peak wavelength for GalnN. [Pg.510]

Aa = ae - au, and a . and au are the lattice constants of thick GalnN grown under the equilibrium condition and of the underlying epitaxial layer. [Pg.511]

FIGURE 5 EDX composition analysis of GalnN on a GaN epitaxial layer for a thick GalnN layer with layer thickness of 2.0 pm. The open squares are the indium mole fractions of Region (I), and the closed circles are those of Region (II). [Pg.513]


C2.1 GalnN quantum wells composition pulling effect C2.2 GalnN quantum wells microstructure C2.3 GalnN quantum wells optical properties C2.4 GalnN quantum wells effect of phase separation on lasing... [Pg.508]

C2.1 GalnN quantum wells composition pulling effect... [Pg.509]




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