GalnN

FIGURE 1 Calculated electron drift mobilities at 300 K in GalnN and AlInN as a function of composition, in the limit of negligible ionised impurity scattering, after [8],... 

A7.ll X-ray diffraction characterisation of GaN-based materials triple axis dijfractometry C AlGaN AND GalnN GROWN ON GaN... 

FIGURE 4 RLMs of (a) AlGaN about 0.1 im thick, and (b) GalnN about 40 nm thick on GaN grown by OMVPE on sapphire using LT-A1N buffer layer. 

FIGURE 5 High resolution 20/ca-scan profile of the GalnN/GaN MQWs. (a) Experimental results and calculated results with different well thickness, (b) Experimental results and calculated results with different InN molar fraction in the well layer. 

C2.1 GalnN quantum wells composition pulling effect C2.2 GalnN quantum wells microstructure C2.3 GalnN quantum wells optical properties C2.4 GalnN quantum wells effect of phase separation on lasing... 

C2.1 GalnN quantum wells composition pulling effect... 

FIGURE 2 Layer thickness dependence of PL peak wavelength for GalnN. 

Aa = ae - au, and a<. and au are the lattice constants of thick GalnN grown under the equilibrium condition and of the underlying epitaxial layer. 

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