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GaAs , ultrahigh vacuum

Cross-sectional scanning tunneling microscopy (XSTM) measurements were carried out for a cleaved (110) surface of GaAs doped with Mn. The samples were cleaved in an ultrahigh vacuum (UHV) chamber in order to expose the atomically flat (110) surface. The measurements have been done in the UHV chamber at room temperature. [Pg.18]

Production of NEA GaAs requires cleaning and cesium-activation procedures [5,97]. All steps are performed under ultrahigh vacuum (oxygen-free) conditions after a system bakeout. [Pg.172]

Hung, L.S., Zheng, L.R., Blanton, T.N., 1992. Epitaxial growth of MgO on (100)GaAs using ultrahigh vacuum electron-beam evaporation. Appl. Phys. Lett. 60, 3129—3131. http // dx.doi.org/10.1063/1.106745. [Pg.24]

These techniques have been applied to ultrahigh vacuum cleaved surfaces of several III-V materials (GaSb, GaAs, GaP,... [Pg.33]

See other pages where GaAs , ultrahigh vacuum is mentioned: [Pg.297]    [Pg.1471]    [Pg.235]    [Pg.412]    [Pg.20]    [Pg.154]    [Pg.8]    [Pg.585]    [Pg.192]    [Pg.899]    [Pg.40]   
See also in sourсe #XX -- [ Pg.14 ]



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