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Fowler OLEDs

Fowler-Nordheim tunneling of, 22 258 in HBTs, 22 167-168 Moore s law and device scaling and, 22 254 in RTDs, 22 170-171 in semiconducting silicon, 22 485-486 in semiconductors, 22 233, 237-239 in SETs, 22 171-172 in single layer OLEDs, 22 215-216 in spinel ferrites, 11 60-61 in the superconducting state, 23 804 Electron spectrometer system, components of, 24 100-101... [Pg.308]

The voltage dependence of the injection-limited current resulting from this treatment, as well as experimentally observed I(V) characteristics are Fowler-Nordheim (FN)-like, i.e., similar to that obtained by tunneling through a triangular barrier. This similarity suggested a number of treatments that analyzed injection into OLEDs in terms of this model, which predicts that... [Pg.28]

See other pages where Fowler OLEDs is mentioned: [Pg.544]    [Pg.546]    [Pg.47]    [Pg.437]    [Pg.441]    [Pg.151]    [Pg.151]   
See also in sourсe #XX -- [ Pg.437 ]

See also in sourсe #XX -- [ Pg.151 ]



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