Fluorosilicate-Based Melts

A study of silicon film deposition using K SiFg was begun at Stanford University in the Center for Materials Reseeirch in the early 1970 s. Of the several fluoride systems studied, only LiF-KF and LIF-KF-NaF melts proved suitable. In 1977, Cohen (36) reported that epitaxial Si iayers couid be deposited from a LiF-KF eutectic containing KjSiFg. He aiso produced continuous fiims using a dissoiving silicon anode. 

Oison and Carleton (41) extended the use of these melt systems by using a copper-silicon anode to simulate electrorefining metallurgical 

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