FB-CVD

Nickel loaded activated carbon granulates (Norit Elorit) are prepared using the incipient wetness method (Ni(N0))2 6H20 in water) to arrive at 5 w% and followed by drying overnight at 385 K. The conversion is carried out in a fluidized bed chennical vapour deposition (FB-CVD) reactor of which the set-up is displayed in Figure 1. 

Activated carbon granulates are converted in the FB-CVD reactor. TGA analysis has been used to calculate the composition of the granulates after conversion and carbon removal. These compositions and the specific surface areas are shown in Table 2. The amount of ash originates from the activated carbon and the nickel applied. Owing to a concomitant increase in carbon conversion by utilizing increased amounts of nickel, the relative nickel content remains almost constant. Prior to oxidation the surface area is determined by a combination of the origituil carbon and the SiC. Removal of the carbon discloses the textural properties of the SiC the surface areas vary between 30 and 80 m /g, which is sufficient for catalytic purposes, especially at high temperatures reactions (>1000 K). 

KAERI uses the fluidized bed chemical vapor deposition (FB-CVD) technology for TRISO coating (Kim et al., 2009a). Fig. 13.15 shows the arrangement of the FB-CVD furnace with the gas supply and off-gas system. Continuous coating techniques for SiC TRISO layers have been developed, and the optimization of the coating procedure has been completed at the 20—30g/batch scale. Fig. 13.16 shows KAERTs pilot SiC TRISO-coated fuel particle. 

CDP10-Fb Titanium films are used in decorative coatings as well as wear-resistant tools because of their thermal stability and low electrical resistivity. TiN is produced by CVD from a mixture of TiCL and NH3TiN. 

Reference CVD reactor Gas composition c Gas pressure P(Torr) MW Power / m(W) Substrate temp. TAO Bias voltage fb(V) Time (min) Gas composition c Gas pressure P(Torr) MW Power P, (W) Substrate temp. CsCC) Results and comments... 

Figure 4.11. CVD phase diagrams of AlCfi-SiCLt-CCb-fb system at 1000°C [28] (a) 2 Torr and (b) 150 Torr...

Relatively sharp luminescence lines observed near the band edge arise from the recombination of electron-hole pairs that form bound excitons (BEs) at impurity sites or free-to-bound (FB) transitions that involve the recombination of free electrons (holes) with holes (electrons) bound at neutral acceptors (donors). Figure 12 shows the PL spectrum at 1.96 K for an undoped 3C-SiC epilayer grown on Si by CVD (63). In the energy range 2.4-2.2 eV, five sharp lines are seen. Choyke et al. (64) have observed five similar sharp luminescence peaks for a 3C-S1C crystal grown by the Lely method. These peaks have been assigned as the zero phonon line (ZPL, 2.379 eV) and its phonon replicas TA, LA, TO, and LO. They attributed these lines to... 

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