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Factors annealing temperature

In a detailed study the dissolution kinetics of shock-modified rutile in hydrofluoric acid were carefully studied by Casey and co-workers [88C01], Based on the defect studies of the previous sections in which quantitative measures of point and line defects were obtained, dissolution rates were measured on the as-shocked as well as on shocked and subsequently annealed powders. At each of the annealing temperatures of 200, 245, 330, 475, 675, 850, and 1000 °C, the defects were characterized. It was observed that the dissolution rates varied by only a factor of 2 in the most extreme case. Such a small effect was surprising given the very large dislocation densities in the samples. It was concluded that the dissolution rates were not controlled by the dislocations as had been previously proposed. [Pg.174]

Next, the side chains of P2 were replaced with the side chains of ALBP at corresponding positions in the amino-acid sequence to produce the first ALBP model. The position and orientation of this model were refined by least squares, treating the model as a rigid body. Subsequent refinement was by simulated annealing. At first, all temperature factors were constrained at 15.0 A2. After the first round of simulated annealing, temperature factors were allowed to refine for atoms in groups, one value of B for all backbone atoms within a residue and another for side-chain atoms in the residue. [Pg.179]

Figure 25 shows the annealing temperature effect on the thermal stability factor KuV /kBT [49] and anisotropy field Hk for the FePt C films with 45 vol. %C. Hk was calculated from Ho = 0.48 Hk, Ho was obtained from the Sharock fitting parameter. Hk increases rapidly with annealing temperature TA between 600 and 625 °C, then increases slowly and to saturation for TA > 625 °C. KuV /kBT increases linearly with TA except for the point at 675 °C that might be caused by either experimental error or the activation volume V being unusually small. Since Ka would be constant after the completion of L 0 ordering, the further increase of KuV /kBT with Ta is mainly due to the increase of V. As shown in Fig. 26, Ku is about 1.2 x 107 erg/cm3 for TA > 625 °C V increases slowly initially and then increases more rapidly with TA, which results in the quasi-linear increase of KuV /kBT. Figure 25 shows the annealing temperature effect on the thermal stability factor KuV /kBT [49] and anisotropy field Hk for the FePt C films with 45 vol. %C. Hk was calculated from Ho = 0.48 Hk, Ho was obtained from the Sharock fitting parameter. Hk increases rapidly with annealing temperature TA between 600 and 625 °C, then increases slowly and to saturation for TA > 625 °C. KuV /kBT increases linearly with TA except for the point at 675 °C that might be caused by either experimental error or the activation volume V being unusually small. Since Ka would be constant after the completion of L 0 ordering, the further increase of KuV /kBT with Ta is mainly due to the increase of V. As shown in Fig. 26, Ku is about 1.2 x 107 erg/cm3 for TA > 625 °C V increases slowly initially and then increases more rapidly with TA, which results in the quasi-linear increase of KuV /kBT.
In the last expression, Vo is a pre-exponential factor, kB—Boltzmann constant, T— annealing temperature, Emi is the migration energy of H atoms over the z -th scenario . It corresponds to their activation energy, Eai, in a case of spatial redistribution of H atoms between the (tetrahedral) interstices (Ea Emi). Therefore, the temperature dependence of x follows the so-called Arrhenius law ... [Pg.230]

Fig. 16. (a) AES determined near-surface (average) concentration of A1 as function of annealing temperature for the FeAl(l 11) surface (three datasets). The dotted lines estimate the uncertainty introduced by the error in the matrix factor. The phases, which are observed in LEED after quenching the annealed sample to room temperature, are also shown, (b) Comparison of the segregation curves for all investigated surface orientations. Near-surface concentrations corresponding to bulk terminated surfaces are marked by open circles [77]. [Pg.107]

Fig. 5.4.7 D ifferential temperature coefficient of the gauge factor of boron-doped polysilicon films as a function of dopant concentration Na for different annealing temperatures [24]... [Pg.133]

The LCR conditions shown serve as one, specific example. For individual applications, conditions must be optimized. We have found the critical optimization factors to be probe concentration, annealing temperature, cycle number, and ligase concentration. Any commercially available thermophilic DNA ligase should be suitable with a compatible buffer. We have had good success with ligase purified from Tkermus thermophilis. Since there is no universally accepted enzyme unit definition, the optimal amount of enzyme to use must be determined experimentally. [Pg.251]

For example, the effects of AN content on miscibility of SAN with PMMA were studied by measuring the thickness of the interphase (Higashida et al. 1995). The effects of concentration, compatibilization, and annealing for PA with either PS or PE (compatibilized by 5 wt% of PP-MAh or SMA) were studied by SEM (Chen et al. 1988). Compatibilization reduced the diameter of dispersed phases by a factor of ten and stabilized the system against coalescence at the annealing temperature T = 200-230 °C, for at least 1.5 h). [Pg.277]


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See also in sourсe #XX -- [ Pg.101 , Pg.103 ]




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