Fabrication for Electrochemical Applications

CH4 H2 At at 50 65 200 standard cubic centimetres per minute (seem). Ambient pressure 

Few crystallographic orientations and edge plane defects jnesent at the grain boundaries and at variable multiple layer graphene areas 

Substrate/ catalyst T emperature/°C Gas reaction mixtures (precursors) Growth time Special conditions Graphene grain size Thickness of graphene layer Graphene quality References 

Copper 1,000 cooling rate 40-300 °C min H2/CH4 at 0.06 seem and partial pressure 0.5 Torr 3 min Copper foil (25 pm thick) 10 xm 95 % 1 monolayer Few crystallographic orientations and few defects present at the grain boundaries with 5 % being multiple layer graphene [46] 

Copper 1,035 cooling rate not specified CH4 at a flow rate and partial pressure less than 1 seem and 50 m Torr respectively 1 h Copper foil (25 pm thick), enclosure utilised 0.5 mm 1 monolayer Single crystallographic orientation, high purity defect free single graphene crystals [58] 

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