Experimental systems deep-level states

Solution Orazem et al. and Jansen et al. described the impedance response for an n-type GoAs Schottky diode with temperature as a parameter. The system consisted of an n-GaAs single crystal with a Ti Schottky contact at one end and a Au, Ge, Ni Schottky contact at the eutectic composition at the other end. This material has been well characterized in the literature and, in particular, has a well-knozvn EL2 deep-level state that lies 0.83 to 0.85 eV below the conduction band edge. Experimental details are provided by Jansen et... 

Systems with deep potential wells and consequently a high density of states are a real challenge for exact quantum mechanical theories. Advances in numerical approaches and computer technology have made possible exact calculations for realistic molecular systems only recently. In the following we briefly describe one particular system, HCO, for which the results of exact dynamics calculations using an accurate PES can be compared with state-of-the-art experimental data at an unprecedented level of sophistication. Because of lack of space the discussion must be very short but is intended to stimulate interest in other examples. Traditional descriptions of fragmentation on ground-state potentials use mainly statistical approximations (see Statistical Adiabatic Channel Models). 

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