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Equilibrium model, reactions charged interfaces

At equilibrium the rate of all elementary reaction steps in the forward and reverse directions are equal therefore, this condition provides a check point for studying reaction dynamics. Any postulated mechanism must both satisfy rate data and the overall equilibrium condition. Additionally, for the case of reactions occurring at charged interfaces, the appropriate model of the interface must be selected. A variety of surface complexation models have been used to successfully predict adsorption characteristics when certain assumptions are made and model input parameters selected to give the best model fit (12). One impetus for this work was to establish a self-consistent set of equilibrium and kinetic data in support of a given modeling approach. [Pg.117]

Having chosen a particular model for the electrical properties of the interface, e.g., the TIM, it is necessary to incorporate the same model into the kinetic analysis. Just as electrical double layer (EDL) properties influence equilibrium partitioning between solid and liquid phases, they can also be expected to affect the rates of elementary reaction steps. An illustration of the effect of the EDL on adsorption/desorption reaction steps is shown schematically in Figure 7. In the case of lead ion adsorption onto a positively charged surface, the rate of adsorption is diminished and the rate of desorption enhanced relative to the case where there are no EDL effects. [Pg.125]

Figure 10. Kleitz s reaction pathway model for solid-state gas-diffusion electrodes. Traditionally, losses in reversible work at an electrochemical interface can be described as a series of contiguous drops in electrical state along a current pathway, for example. A—E—B. However, if charge transfer at point E is limited by the availability of a neutral electroactive intermediate (in this case ad (b) sorbed oxygen at the interface), a thermodynamic (Nernstian) step in electrical state [d/j) develops, related to the displacement in concentration of that intermediate from equilibrium. In this way it is possible for irreversibilities along a current-independent pathway (in this case formation and transport of electroactive oxygen) to manifest themselves as electrical resistance. This type of chemical valve , as Kleitz calls it, may also involve a significant reservoir of intermediates that appears as a capacitance in transient measurements such as impedance. Portions of this image are adapted from ref 46. (Adapted with permission from ref 46. Copyright 1993 Rise National Laboratory, Denmark.)... Figure 10. Kleitz s reaction pathway model for solid-state gas-diffusion electrodes. Traditionally, losses in reversible work at an electrochemical interface can be described as a series of contiguous drops in electrical state along a current pathway, for example. A—E—B. However, if charge transfer at point E is limited by the availability of a neutral electroactive intermediate (in this case ad (b) sorbed oxygen at the interface), a thermodynamic (Nernstian) step in electrical state [d/j) develops, related to the displacement in concentration of that intermediate from equilibrium. In this way it is possible for irreversibilities along a current-independent pathway (in this case formation and transport of electroactive oxygen) to manifest themselves as electrical resistance. This type of chemical valve , as Kleitz calls it, may also involve a significant reservoir of intermediates that appears as a capacitance in transient measurements such as impedance. Portions of this image are adapted from ref 46. (Adapted with permission from ref 46. Copyright 1993 Rise National Laboratory, Denmark.)...
Salvador [100] introduced a non-equilibrium thermodynamic approach taking entropy into account, which is not present in the conventional Gerischer model, formulating a dependence between the charge transfer mechanism at a semiconductor-electrolyte interface under illumination and the physical properties thermodynamically defining the irreversible photoelectrochemical system properties. The force of the resulting photoelectrochemical reactions are described in terms of photocurrent intensity, photoelectochemical activity, and interfacial charge transfer... [Pg.151]

AX at the AY/AX boundary. The main feature of this interface reaction (i.e., the transport of building elements across b) is the injection of mobile point defects into available vacant sites and the subsequent local relaxation towards equilibrium distributions. According to Figure 10-9 b, two different modes of cation injection can take place in the relaxation zone R. 1) Cations are injected into the sublattice of predominant ionic transference in AX by the applied field. In this case, no further defect reaction is necessary for the continuation of cation transport. 2) Cations are injected into the wrong sublattice which does not contribute noticeably to the cation transport in AX. Defect reactions (relaxation) will occur subsequently to ensure continuous charge transport. This is the situation depicted in Figure 10-9b, and, in view of its model character, we briefly outline the transport formalism. [Pg.248]

A detailed study[81] of the solvent non-equilibrium response to electron transfer reactions at the interface between a model diatomic non-polar solvent and a diatomic polar solvent has shown that solvent relaxation at the liquid/liquid interface can be significantly slower than in the bulk of each liquid. In this model, the solvent response to the charge separation reaction A + D —> A + D+ is slow because large structural rearrangements of surface dipoles are needed to bring the products to their new equilibrium state. [Pg.695]

To describe in detail such a specific system as the metal oxide/solution interface, it is necessary to prepare a model describing dependences between potential and surface charge and draw up reactions, the occurrence of which leads to the changes of surface charge o-The reaction equations describing an equilibrium state between the surface and solution as well as values of equilibrium constants of these reactions provide detailed information... [Pg.381]

Various chemical surface complexation models have been developed to describe potentiometric titration and metal adsorption data at the oxide—mineral solution interface. Surface complexation models provide molecular descriptions of metal adsorption using an equilibrium approach that defines surface species, chemical reactions, mass balances, and charge balances. Thermodynamic properties such as solid-phase activity coefficients and equilibrium constants are calculated mathematically. The major advancement of the chemical surface complexation models is consideration of charge on both the adsorbate metal ion and the adsorbent surface. In addition, these models can provide insight into the stoichiometry and reactivity of adsorbed species. Application of these models to reference oxide minerals has been extensive, but their use in describing ion adsorption by clay minerals, organic materials, and soils has been more limited. [Pg.220]

Surface complexation models of the solid-solution interface share at least six common assumptions (1) surfaces can be described as planes of constant electrical potential with a specific surface site density (2) equations can be written to describe reactions between solution species and the surface sites (3) the reactants and products in these equations are at local equilibrium and their relative concentrations can be described using mass law equations (4) variable charge at the mineral surface is a direct result of chemical reactions at the surface (5) the effect of surface charge on measured equilibrium constants can be calculated and (6) the intrinsic (i.e., charge and potential independent) equilibrium constants can then be extracted from experimental measurements (Dzombak and Morel, 1990 Koretsky, 2000). [Pg.221]

The model suggests that charge transfer is a primary mechanism of Schottky barrier formation, and a good agreement with the experimental results is found for polycrystalline inorganic semiconductors. It should be emphasized that the model is based on the thermod)mamic equilibrium of electrons across the interface between the metal and the semiconductor, and is facilitated by the interface bonds. Therefore, it does not depend on the details of the interface reactions, so long as the physical properties of the semiconductor, such as IP and Eg, remain intact at the interface. The model does not apply to interfaces where strong chemical reactions result in the domination of the interface by new reacted species. [Pg.149]

Reactions at surface functional groups are typically modeled via surface com-plexation models (SCMs), which are simply equilibrium chemical models modified to correct for surface electrostatic effects. SCMs model acid-base reactions at surface functional groups via intrinsic equilibrium constants and ionic solutirai species concentrations corrected to account for the electric field around the interface. Thus, the effective equilibrium constants account for both chemical and electrostatic effects, and continuously change as surface charging progresses. [Pg.198]


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See also in sourсe #XX -- [ Pg.117 ]




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