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Engineering notation

For an interplanar spacing, d0 the shear angle in engineering notation is given by 9y=9x/dc. As the shear modulus is defined by g=9r/9y, it follows that... [Pg.39]

The third factor, ZR, in Eq. (5.1) is called the residual contribution in the chemical engineering notation and it arises from all kinds of non-steric interactions between molecules, i.e., usually from vdW, electrostatic, and hydrogen bond interactions. Despite its name, it is the most important contribution in most liquids. The basic assumption of surface-pair interaction models is that residual—i.e., non-steric—interactions can be described as local pairwise interactions of surface segments. The residual contribution is just the partition sum of an ensemble of pairwise interacting surface segments. [Pg.61]

Chemical Engineering Notation, Appendix B of this book. [Pg.472]

Variables should be denoted by standard mathematical engineering notation. They should be carefully defined, for example by means of diagrams, co-ordinate systems, signs or scales. [Pg.30]

Note that the usual engineering notation for thermal conductivity is k. [Pg.32]

When numbers have four or more digits to the left of the decimal point, they must have commas to help the reader to see quickly the thousands, millions, and so on, places. Only if the numbers are too cumbersome should powers-of-10 notation be used. When it is used, so-called engineering notation is preferred to scientific notation. In engineeiii notation, the power of 10 is always divisible by 3 (analogous to the commas mentioned above). In a column of num-bers that all refer to the same kind of property, the format should be the same for each entry. [Pg.1069]

Figure 1.4 Concentrations in fractions and percentages. These are translated into volume and surface atomic densities for the Silicon (110) surface. Note As discussed in Section 2.1.1.2, these densities are a function of the substrate as well as the surface plane. Engineering notation, where e refers to the base 10 (not to be confused with the exponential e), is nsed for the sake of simplicity. Also shown are some additional analytical techniques along with the approximate best possible detection limits noted for specific elements when using fully optimized analysis conditions. Note ICP-MS, in this case, would either require solid digestion, be coupled with Laser Ablation (LA), or coupled with Vapor Phase Decomposition (VPD) for dissolving surface films. Figure 1.4 Concentrations in fractions and percentages. These are translated into volume and surface atomic densities for the Silicon (110) surface. Note As discussed in Section 2.1.1.2, these densities are a function of the substrate as well as the surface plane. Engineering notation, where e refers to the base 10 (not to be confused with the exponential e), is nsed for the sake of simplicity. Also shown are some additional analytical techniques along with the approximate best possible detection limits noted for specific elements when using fully optimized analysis conditions. Note ICP-MS, in this case, would either require solid digestion, be coupled with Laser Ablation (LA), or coupled with Vapor Phase Decomposition (VPD) for dissolving surface films.
Fig, 1, (a) Definitions for normal and shear stresses at a point in terms of the nomial and tangential components of the force increment acting over the infinitesimal area, AA. (b) Two-dimensional representation of tensorial and engineering notations for stresses acting on a plane stress element, (c) General three-dimensional stress state and corresponding stress state in principal planes. [Pg.7]

Due to the symmetry of T and E, the number of components of the stiffness and compliance tensors is reduced from a total of 81 to 36 independent ones. Thus, it is possible to represent these fourth-order tensors alternatively in the form of (6 x 6) matrices (which, of course, do not have the transformation properties of a tensor), and to express Hooke s law and inverse Hooke s law in direct matrix notation (engineering notation) as... [Pg.37]

Note that in this equation, the complex variable notation has been changed from the "fused in most physics oriented works to the "/"commonly used in engineering work. This is in anticipation of using previously developed computer code which used the engineering notation. Some authors also note that the normalized equation is equivalent to working in a system of units in which h is equal to 1 and m is equal to 1/2. [Pg.782]

Note. CN, Contracted notation EN, Engineering notation TN, Tensor notation. [Pg.181]

Contracted notation (CN) has been introduced in the equations, where it is convenient for computer solution to use single-digit subscripts to designate stress and strain terms. The relationships between (1) tensor or elasticity notation, (2) engineering notation (EN), and (3) CN are defined in Table 8.3. [Pg.181]


See other pages where Engineering notation is mentioned: [Pg.12]    [Pg.19]    [Pg.16]    [Pg.397]    [Pg.398]    [Pg.262]    [Pg.9]    [Pg.262]    [Pg.94]    [Pg.176]    [Pg.56]    [Pg.5]    [Pg.6]    [Pg.202]   
See also in sourсe #XX -- [ Pg.16 ]




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