Electrophotographic receptors

Another field of application for boron nitride is its use as blocking layer and/or surface layer in electrophotographic photoreceptors [69 to 96,380]. Again, these layers are produced by the CVD methods described in Section 4.1.1.10.2, p. 62. Depending on the deposition method or specific conditions, the boron nitride layers in the electrophotographic receptors may also consist of or contain p-BN [97 to 100]. 

Mobility measurements by the TOP methods considered in Chapters 3 and 4 are particularly important, but they cannot give information about the whole spectrum of states in the mobility gap of amorphous chalcogenides. Therefore, in addition to TOP, XTOP, IPTOP, TSC, and TSDC, other complimentary techniques that probe the gap states are needed. Xerographic techniques that were initially developed to characterize properties of electrophotographic (xerographic) receptors [1] seemed to be informative, suitable, and widely applicable for the study of amorphous thin films and photoconductive insulator thin films [2],... 

Trans-4-N,N-diaryl aminostilbenes were synthesized by Verkade in a one-pot sequential procedure, consisting of sequential C—N and C—N bond formations [194], Today, these compounds are widely used as electrophotographic photoconductors and receptors. By using 4-aminostyrene and bromobenzene derivatives as... 

---