Electronic properties of AB-type semiconductor

We can represent a III-V semiconductor substrate by a binary chain of 2N A and B atoms with s- and p-orbitals associated with them, respectively (Fig. 4.5). The site energy at an A(B) atom is a( b), and the A — B(B — A) bond energy is —fJ(fJ). The adatom a is characterized by the site energy ea and interacts with the semiconductor surface H-atom at n = 1 via the bond of energy (3 (Davison and Huang 1974). 

Within the framework of the MO-TBA method ( 1-1), the Schrodinger equation for an AB-chain can be written as a pair of coupled difference equations, namely, (Davison and Levine 1970) 

To evaluate this integral of the Dirac 5-functional, we note that 

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