Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Electron scattering analytical models

B. I. Schneider, Tf-matrix theory for electron-atom and electron-molecule collisions using analytic basis set expansions, Chem. Phys. Lett. 37 237 (1975) B. I. Schneider, 77-matrix theory for electron-molecule collisions using analytic basis set expansions 2. Electron-//, scattering in static-exchange model. Phys. Rev. A 77 1957 (1975). [Pg.304]

The upper bound of the escape probability, corresponding to t oo, can also be analytically calculated. In this limit, the electron is allowed to make many revolutions in the same orbit around the cation before it is scattered into another orbit. Under this condition, the electron motion may be described as diffusion in energy space [23]. The escape probability calculated by using the energy diffusion model is also included in Fig. 3. We see that the simulation results for finite x properly approach the energy diffusion limit. [Pg.271]

H. Estrada, W. Domcke, Analytic properties of the S matrix for a simple model of fixed-nuclei electron-polar-molecule scattering, J. Phys. B (At. Mol.) 17 (1984) 279. [Pg.533]

Volume, surface and hydration properties of low-molecular compounds and macromolecules in solution are required in the biosciences for numerous purposes (i) correct application of many physicochemical techniques (e.g., analytical ultracentrifugation, solution scattering and diffraction techniques, electron microscopy, modeling approaches). [Pg.19]

Estimates of interfacial thicknesses have been made by analysis of electron micrographs or by scanning analytical electron microscopy. X-Ray and neutron scattering methods have also been used but most extensively in the study of the interface in block copolymers. It is generally necessary to fit the scattering profile to a complete model of the morphology which contains a diffuse interface. [Pg.152]

Knowledge of elastic-scattering effects is important in the development of models for quantitative AES, XPS, and other techniques. Analytical descriptions of electron transport for AES and XPS have been developed on the basis of the transport approximation, as described earher. It is clear from the right-hand side of Eq. [Pg.239]


See other pages where Electron scattering analytical models is mentioned: [Pg.52]    [Pg.52]    [Pg.57]    [Pg.316]    [Pg.388]    [Pg.162]    [Pg.104]    [Pg.444]    [Pg.394]    [Pg.395]    [Pg.242]    [Pg.141]    [Pg.9]    [Pg.110]    [Pg.147]    [Pg.164]    [Pg.4]    [Pg.547]    [Pg.175]    [Pg.584]    [Pg.96]    [Pg.448]    [Pg.421]    [Pg.186]    [Pg.125]    [Pg.269]    [Pg.253]    [Pg.138]    [Pg.508]    [Pg.192]    [Pg.780]    [Pg.110]    [Pg.32]    [Pg.61]    [Pg.3]   
See also in sourсe #XX -- [ Pg.48 , Pg.52 ]




SEARCH



Analytical modeling

Electron analytical

Electron analytics

Electronic models

Electrons scattered

Electrons scattering

Modelling, analytical

Scattering models

© 2024 chempedia.info