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Electron phonon-assisted

Semiconductivity in oxide glasses involves polarons. An electron in a localized state distorts its surroundings to some extent, and this combination of the electron plus its distortion is called a polaron. As the electron moves, the distortion moves with it through the lattice. In oxide glasses the polarons are very localized, because of substantial electrostatic interactions between the electrons and the lattice. Conduction is assisted by electron-phonon coupling, ie, the lattice vibrations help transfer the charge carriers from one site to another. The polarons are said to "hop" between sites. [Pg.333]

A simplified schematic diagram of transitions that lead to luminescence in materials containing impurides is shown in Figure 1. In process 1 an electron that has been excited well above the conduction band et e dribbles down, reaching thermal equilibrium with the lattice. This may result in phonon-assisted photon emission or, more likely, the emission of phonons only. Process 2 produces intrinsic luminescence due to direct recombination between an electron in the conduction band... [Pg.152]

In discussing low temperature-dependent mobility, we should mention charge transport by polarons, an intermolecular phonon-assisted hopping process 24>25>. Polarons (charge carriers trapped in their polarization field) arise from a strong electron-phonon interaction where there is a weak overlap of wave functions of... [Pg.88]

The soliton conductivity model for rrans-(CH) was put forward by Kivelson [115]. It was shown that at low temperature phonon assisted electron hopping between soliton-bound states may be the dominant conduction process in a lightly doped one - dimensional Peierls system such as polyacetylene. The presence of disorder, as represented by a spatially random distribution of charged dopant molecules causes the hopping conduction pathway to be essentially three dimensional. At the photoexitation stage, mainly neutral solitons have to be formed. These solitons maintain the soliton bands. The transport processes have to be hopping ones with a highly expressed dispersive... [Pg.31]

An X-ray photoelectron spectroscopic study of Ni(DPG)2I showed no evidence of trapped valence or any appreciable change in the charge on the metal upon oxidation.97 The site of partial oxidation and hence the electron transport mechanism is still unclear but one explanation of the relatively low conductivity is that the conduction pathway is metal centred and that the M—M distances are too long for effective orbital overlap. Electron transport could be via a phonon-assisted hopping mechanism or, in the Epstein—Conwell description, involve weakly localized electronic states, a band gap (2A) and an activated carrier concentration.101... [Pg.144]

The dispersionless optical phonon mode />, splits the degenerated unperturbed electron level (j = 1,2) while the mode b2 mediates the electron transitions between the levels. This latter term represents phonon-assisted tunneling, a mechanism of the... [Pg.633]

Let us note that the quantum phonon assistance of the electron tunneling (/3-term in equations (1) and (2)) constitutes the difference of the model from the related dimer and exciton quantum models where instead of /3 Y.n (h2n + 2n)° n °f equation (1) there stands Acrxn, where A is the distance between the levels [4,5],... [Pg.634]

Fig. 6 Schematic illustration of the phonon-assisted exciton dissociation process. Due to the electronic state couplings, the photogenerated exciton (XT) wavepacket undergoes transitions to an interfacial charge transfer (CT) state, along with indirect XT — IS — CT transitions via an intermediate (IS) state (see panel (b)). In Ref. [52], the diabatic Hamiltonian of Eqs. (19)-(20) was parametrized for two relevant interface configurations (eclipsed (E) vs. staggered (S) as shown in panel (a)) which correspond to the configurations of Fig. 3. Fig. 6 Schematic illustration of the phonon-assisted exciton dissociation process. Due to the electronic state couplings, the photogenerated exciton (XT) wavepacket undergoes transitions to an interfacial charge transfer (CT) state, along with indirect XT — IS — CT transitions via an intermediate (IS) state (see panel (b)). In Ref. [52], the diabatic Hamiltonian of Eqs. (19)-(20) was parametrized for two relevant interface configurations (eclipsed (E) vs. staggered (S) as shown in panel (a)) which correspond to the configurations of Fig. 3.
A spin-dependent recombination rate is another consequence of the electron-hole correlation. The conservation of spin selection rule is preserved in amorphous materials. The final state of the recombination process has zero spin and both radiative and phonon-assisted non-radiative transitions occur without change in spin, so that recombination can only proceed from an initial state of zero spin. A weakly interacting electron-hole pair forms four possible spin states, one singlet and one triplet. Of the four states, only the singlet and one... [Pg.287]

However, very soon it became clear that the situation is more complex (e.g. [9, 10]). The obvious problem arises with the fact that the red-yellow PL from PS is relatively slow with a decay time in the range of tens of microseconds, which, together with some further experimental observations [11] and theoretical calculations [9,10,12], is considered as strong evidence for an indirect band gap. However, as pointed out by Hybertsen [13], the electron and hole wave functions in small crystallites are spread in k space so that it is no longer meaningful to debate whether the gap is direct or indirect. Detailed calculations show that the phonon assisted transitions dominate in crystallites larger than about 1.5 nm, where an important part of the phonon contribution comes from scattering at the surface of the crystallites and a part from the bulk phonons. [Pg.822]

PHONON-ASSISTED TUNNELING THEORIES APPLIED TO ELECTRONIC CONDUCTION IN NANOWIRES OF INORGANIC COMPOUNDS... [Pg.48]

We assume that a source of charge carriers is the local electronic states (traps) in the electrode-nanowire interfaee layer, whose electrons emerge to the conduction band of the erystal due to an electrical field, induced phonon-assisted tunneling. [Pg.48]

Phonon-assisted tunneling theories applied to electronic... [Pg.655]


See other pages where Electron phonon-assisted is mentioned: [Pg.446]    [Pg.254]    [Pg.298]    [Pg.308]    [Pg.13]    [Pg.323]    [Pg.336]    [Pg.248]    [Pg.371]    [Pg.145]    [Pg.185]    [Pg.15]    [Pg.271]    [Pg.187]    [Pg.79]    [Pg.48]    [Pg.356]    [Pg.109]    [Pg.632]    [Pg.183]    [Pg.64]    [Pg.104]    [Pg.109]    [Pg.110]    [Pg.118]    [Pg.165]    [Pg.232]    [Pg.367]    [Pg.454]    [Pg.250]    [Pg.585]    [Pg.287]    [Pg.145]    [Pg.169]    [Pg.52]   
See also in sourсe #XX -- [ Pg.1043 ]

See also in sourсe #XX -- [ Pg.1043 ]




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Electron-phonon

Phonon-assisted

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