Electron irradiation recovery after

The success of the non-equilibrium CVD growth technique for the homo- and hetero-epitaxial growth of SiC has been the major thrust of the last decade. Many of the potential applications of SiC in semiconductor electronics depend upon ion-implantation techniques for device fabrication. Several authors [101-118] have reported studies of the lattice damage induced by ion-implantation or by fast-particle irradiation, and of lattice damage recovery, after the seminal work of Makarov [119]. 

Studies of the effect of 14 MeV neutron irradiation on semiconductor electronic components have an essential role, because many electronic instruments are used in intense fast neutron fields. Radiation effects can be observed at a fast neutron fluence in the order of 10 /cm at 20°C. Changes in the main characteristics of electronic circuits depend strongly on the type of semiconductor components. For example, definite changes were observed in the operating characteristics of Si(Li) detectors, diodes, transistors, and integrated circuits after the irradiation with 14 MeV neutrons up to 10 /cm fluence. Further investigations are needed to study the effect of self-recovery of the irradiated Si(Li) detectors and integrated circuits. 

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