Electron-beam-induced current materials

Voltage contrast and Electron Beam Induced Current (EBIC), two electrical techniques usually used for circuit analysis, have proven useful for semiconductor materials characterization. 

Figure 5. Electron beam (200 keV) induced crystallization sequence in LaP04 at room temperature using a beam current of 0.3 A/cm (a) unirradiated, (b) 1.5 min, (c) 4 min and (d) 6 min of irradiation. The sample was completely amorphized using a 1.5 MeV Kr" irradiation prior to the electron beam irradiation. [Used by permission of the Materials Research Society, from Meldrum et al. (1997b) Journal of Materials Research, Vol. 12, Fig. 3, p 1820.]...

It is difficult to infer a reasonable trap parameter from isothermal photocurrent decay measurements, particularly in this case, where the traps are created at random in the material by ion irradiation. The parameters might be determined directly with sufficient knowledge of the ion beam and its effect on the irradiated material. We also assume that the solid is optically excited so that a portion of the traps above the equilibrium Fermi level contains electrons and a portion of those below the Fermi level contains holes. In the method of Simmons and Tam [182], a current is induced (/ ) in the external circuit given by... 

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