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Electrical Properties of Porous SiC

Semiconductor Research Center, Wright State University, Dayton, [Pg.231]

OH 45435, USA and Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433, USA [Pg.231]

Porous Silicon Carbide and Gallium Nitride Epitaxy, Catalysis, and Biotechnology Applications Edited by Randall M. Feenstra and Colin E.C. Wood 2008 John Wiley Sons, Ltd [Pg.231]

Important electrical properties of porous SiC are discussed in Chapter 9. Not surprisingly, porous SiC has a higher specific resistivity than its host crystals. More significantly, pores appear to trap charge carriers, which renders p-SiC semi-insulating. Such effects strongly influence the use of porous material as electrical sensors. [Pg.339]

In this section, we will discuss our studies on the electrical properties of nickel contacts formed on porous SiC layer via current-voltage (/—V) and capacitance-voltage (C-V) characterization. [Pg.49]

See other pages where Electrical Properties of Porous SiC is mentioned: [Pg.231]    [Pg.233]    [Pg.235]    [Pg.237]    [Pg.239]    [Pg.241]    [Pg.243]    [Pg.231]    [Pg.233]    [Pg.235]    [Pg.237]    [Pg.239]    [Pg.241]    [Pg.243]    [Pg.80]    [Pg.699]    [Pg.99]    [Pg.99]    [Pg.217]    [Pg.3342]    [Pg.375]   


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Electrical properties of

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