Drain channel

Fig. 2 Boxplots of the concentrations of individual and total pesticides and frequency of detection (expressed in % in parentheses) in the water samples collected from each of the six sampling sites. HDAD, HDCD, HEOD, and HEIMD draining channels HDM and HEM bays DIA Deisopro-pylatrazine DEA desethylatrazine...

After this work was finished, Moll allegedly climbed into the pit to test the incline of the drain channel with a bucket of water. The incline turns out to be inadequate. It is made steeper, and in the next test the water runs along the channel and flows into a container placed at its end. Muller continues 200... 

A flat copper FAB target was used in these first experiments, while later a variety of FAB probe tips were described, differing in design, e.g., flat, hemispherical, or conical, or flat with a drain channel, and/or material, e.g., brass, copper, stainless-steel, gold, stainless-steel with a gold-plated channel. 

Centrifugal Mkrofluidics, Fig. 11 Course of liquid break-off at the hydrophobie outlet of the drain channel in a structure designed to stabilize the flow rate Q (Eq. 9). The liquid tears off into a waste resavoir. This way, the outer radial position of the liquid plug r> is kept constant... 

Once again typical FET action characteristics well related to those displayed in Figure 8.48 are clearly reproduced [81,175,209]. Moreover, the source-drain channel current increases with increasing temperatures at a fixed source-drain voltage and gate voltage. On the basis of equations (8.2) and (8.3), this increased source-drain current was found to result principally from enhanced mobility with temperature. The increased carrier density with raised temperatures is also responsible for increment of the source-drain current. We will return to this point at the end of this section. 

Figure 1.3 The resonant gate field effect transistor, one of the first MEMS devices. A released metal cantilever beam forms the gate electrode over the diffused source-drain channel. The input signal is applied to the input force plate, which causes the cantilever beam to vibrate, modulating the current through the transistor. Maximum vibration occurs at the resonant frequency of the cantilever beam, enabling the device to act as a high-Q electromechanical filter. (Reprinted with permission from IEEE Trans. Electron Devices, The resonant gate transistor, H.C. Nathanson, W.E. Newell, R.A. Wickstrom and J.R. Davis Jr., 1967 IEEE.)...

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