Dopants telluride

Antimony is also used as a dopant in -type semiconductors. It is a common additive in dopants for silicon crystals with impurities, to alter the electrical conductivity. Interesting semiconductor properties have been reported for cadmium antimonide [12050-27-0], CdSb, and zinc antimonide [12059-55-9], ZnSb. The latter has good thermoelectric properties. Antimony with a purity as low as 99.9+% is an important alloying ingredient in the bismuth telluride [1504-82-1], Bi Te class of alloys which are used for thermoelectric cooling. 

The synthesized doped glasses acquired specific color at the cooling step depending on the nature of semiconductor and its concentration. We have succeed in fabrication of the glasses with dopant concentration up to 0.75 wt% that was quite sufficient for an appropriate optical absorption of samples with thickness of tenths of millimeters. An increase of dopant concentration in the case of tellurides was difficult because of their lower solubility. 

The system of Johnston and Strege (11) is a horizontal one which uses 5000 seem total H2 flow. A sketch is shown in Fig. 4. No preheat zone is provided. Note that 2% and 5% HC1 concentrations in H2 are used to generate GaCl and InCl. Diethyl-telluride (n-type) and diethyl-zinc (p-type) were the preferred dopant sources. The apparatus consists of a quartz reaction vessel with four inlet tubes... 

Fig. 3.17 Reverse current-voltage eharacteristics of mercury cadmium telluride n v exclusion device for different dopant concentrations at a temperature of 270 K. Device parameters are shown in figure...

Fig. 3.18 Reverse current-voltage characteristics of a mercury cadmium telluride n exclusion device for various dopant concentrations at a temperature of 190 K...

We considered current-voltage characteristics of extraction-exclusion photodiodes for the case of homojunction mercury cadmium telluride structures. All calculations were performed for the material composition x = 0.186. The dopant concentrations in the highly doped regions were 8 x 10 cm within the n" zone and 5 x 10 cm in the p zone. A gradient junction was assumed, modeled by a tangent hyperbolic. The total width of the junctions was 0.1 pm each. The width of the region was 5 pm, and that of the n" region 0.5 pm. 

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