Dopant profiles by the spreading resistance

MAZUR Dopant Profiles by the Spreading Resistance Technique... 

Comparison of Spreading Resistance and SIMS. Figure 9 Is taken from Jim Ehrsteln s paper at the San Jose Symposium. It shows the dopant concentration profiles of three Ion Implants of B Into an N-type substrate, as measured after annealing by SIMS, NDP, and spreading resistance. The Implants were done at 70 keV, with fluences of 1 x lO , 4 X 10, and 1 x 10 cm-2. 

The diffusion of As in high-purity Ge was studied between 600 and 920C. Secondary ion mass spectrometry and spreading resistance profiling were used to determine the concentration profiles of the chemically and electrically active dopants. The results could be described by ... 

The most important application of SCM is two-dimensional dopant concentration profiling in semiconductors. However, the raw capacitance-voltage data obtained from SCM must be converted by a mathematical model into a dopant concentration. Therefore, development and validation of appropriate models represents a large part of SCM methodology. To validate the various models, other experimental techniques must be employed to measure and verify the dopant profiles independently. SCM data are usually compared to secondary ion mass spectrometry (SIMS) measurements of dopant concentrations. Spreading resistance profiling (SRP) and computer simulations are also employed to check model validity. 

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