Dislocation Mechanisms in GaN Films Grown on Porous Substrates or Interlayers

Dislocation Mechanisms in GaN Films Grown on Porous Substrates or Interlayers 

Department of Physics, University at Albany, State University of New York, Albany, NY 12222, USA 

Porous Silicon Carbide and Gallium Nitride Epitaxy, Catalysis, and Biotechnology Applications Edited by Randall M. Feenstra and Colin E.C. Wood 2008 John Wiley Sc Sons, Ltd 

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