Directional ion beam

Summarizing this section, we emphasize that directed ion beams provide an effective means of introducing H into Si (and by inference, into other... 

Various sputtering methods are used for the deposition of diamond like films (refer to Figure 14). It is possible to coat a substrate with a diamond like film by ion beam sputtering using the same ion sources that are used for (non-mass-analyzed) direct ion beam deposition. 

In direct ion beam deposition processes, ion energy in the range of a few tens of eV to a few tens of keV is used for diamond like film deposition. Careful control of ion energy in high-vacuum systems employing mass filtering of carbon ions (as in MSIB) has been shown to produce crystalline diamond materials up to several micrometers in size. ... 

Fig. 6.11. (A) Directional ion beam irradiation can introduce molecular anisotropy, since the cross section for bond breaking depends for planar molecular groups on the relative orientation. (B) On pol3rimide this gives rise to the observed charge asymmetry, characterized by the distribution factors illustrated in Fig. 6. IOC.

Lau WM, BeUo I, Feng X, Huang LJ, Qin FG, Yao ZY, et al. Direct ion-beam deposition of carbon-fihns on silicon in the ion eneigy-range of 15-500Ev. J Appl Phys 1991 70 5623-7. 

To reduce the collisionality of present experiments, various heating methods, such as ICRH, ECRH, and neutral-beam injection have been tried. We have omitted this body of work because it is probably irrelevant to reactor-grade devices. The possibility of direct ion beam injection is one of the major advantages of multipoles and appears to be the easiest and most efficient way to heat a reactor. 

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