Dependence of Bias Stress on Operating Conditions Lifetime Predictions

Dependence of Bias Stress on Operating Conditions Lifetime Predictions 

A similar power law for degradation has also been observed in a-Si H [26] and OLEDs [27]. 

The recovery rate of the reversible traps determines the duty-cycle cut-off below which only long-lived traps contribute to bias stress. At higher duty cycle, the current decay is the result of the simultaneous interplay of fast and slow trapping. 

The fits to Eq. (3) are obtained with the data A 8 x 10- n = 2,y = 0.37 and V° was extracted from transfer measurements before stressing the device. Vj varied between 4 V and 6 V. 

Equation (4) can be used to estimate the lifetime of the TFT for a given allowed current drop at low duty cycle. Because for PQT-12 y 1/3, there is a great advantage in terms of lifetime to design a circuit that tolerates the highest possible current drop before exceeding its specification limits. 

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