Defect mediated sputtering model

Defect-mediated sputtering model. This model developed to explain emissions from insulating surfaces (Si02, LiF, NaCl, etc.) asserts that the defects are introduced in the form of self-trapped excitons and/or holes in response to the valence band excitation induced on ion neutralization/impact. Electron-phonon conpling then results in desorption. 

Except for the interaction of highly charged primary ions, the present consensus tends to favor the defect-mediated sputtering model (Rabalais 1994). For highly charged ions, the intense ultra-fast excitation model appears likely (Aumayr and Winter 1994, 2003). As the probability of inelastic energy loss depends on the overlap of the respective orbital wave functions, simulations of a pure potential sputtering process requires quantum mechanics. As mentioned in Section 3.2.1.3, this is considered outside the scope of this text. 

Defect mediated sputtering model A model for describing sputtering... 

---