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Dark-field mask

The etching procedure using a negative photoresist is identical except that the lithographic mask must be opaque in the regions where metal is to be removed — this is known as a dark-field mask. Exposure of negative resist to UV light makes it insoluble in its developer. [Pg.345]

Fig. 1 The light field and dark field polarities of a typical mask. Fig. 1 The light field and dark field polarities of a typical mask.
Note masks are either comprised of soda-lime glass (coated with either a photographic emulsion, Pe203, or Cr films), or quartz (with a Cr film). Due to the absorption of UV light by glass, the latter is required for deep UV (DUV) photolithography. Masks may be classified as either light-field or dark-field whereas the former is mostly clear with opaque patterns, the latter is an opaque mask, with transparent features. [Pg.341]


See other pages where Dark-field mask is mentioned: [Pg.411]    [Pg.620]    [Pg.139]    [Pg.391]    [Pg.392]    [Pg.411]    [Pg.620]    [Pg.139]    [Pg.391]    [Pg.392]    [Pg.33]    [Pg.344]    [Pg.170]    [Pg.1627]    [Pg.96]    [Pg.122]    [Pg.100]    [Pg.931]    [Pg.77]    [Pg.143]    [Pg.68]    [Pg.122]    [Pg.194]    [Pg.260]    [Pg.3632]    [Pg.37]    [Pg.37]    [Pg.291]   
See also in sourсe #XX -- [ Pg.620 ]




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