Curved field reflections

R. J. Cotter, W. Griffith, and C. Jelinek. Tandem Time-of-Flight (TOF/TOF) Mass Spectrometry and the Curved-Field Reflection. J. Chromatogr., B855(2007) 2-13. 

Cornish, T.J. Cotter, R.J. A Curved Field Reflection TOF Mass Spectrometer for the Simultaneous Focusing of Metastable Product Ions. Rapid Commun. Mass Spectrom. 1994, 8. 781-785. 

The term G H) varies monotonically from unity at low fields to zero at high fields, reflecting the shape of the magnetization curve for a hard superconductor, and is a constant determined by the requirement that at very low fields the flux is completely excluded from the wire. This leads to... 

The dashed line connects the /°, cP, and cases the dotted line shows the doublehumped curve that reflects the trend for ionic radii of the ions in a weak octahedral field. 

Fig. 2. Electron drift velocities as a function of electric field for A, GaAs and B, Si The gradual saturation of curve B is characteristic of all indirect semiconductors. Curve A is characteristic of direct gap semiconductors and at low electric fields this curve has a steeper slope which reflects the larger electron mobiUty. The peak in curve A is the point at which a substantial fraction of the electrons have gained sufficient energy to populate the indirect L minimum which has a much larger electron-effective mass than the F minimum. Above 30 kV/cm (not shown) the drift velocity in Si exceeds that in...

Figure 32. X-ray field intensities at extended Ge (220) lattice positions (0-9) for a perfectly collimated incident X-ray beam. An atomic adlayer whose center falls on one of these positions would have its characteristic fluorescence intensity modulated in the same fashion. The dashed curve represents the Bragg reflectivity profile. (From M. J. Bedzyk, Ph. D thesis, SUNY Albany, 1982.)...

We have seen that the free energy curves for the reactant and product states have the same curvature, so that the relaxation free energy is the same in the reactant and product states /L4plxjd = AA C. This equality reflects the fact that the dielectric susceptibility a (12.24) does not depend on the perturbing field or charge, and is the same in the reactant and product states. We then obtain... 

Fig. 2.18. (a) The even (upper panel) and odd (lower panel) SH responses of a 20 nm Gd(0001) film at 90 K using 815nm/35fs laser pulses. Transient reflectivity change is also displayed in the upper panel (solid black curve). The inset shows the experimental scheme with the magnetization oriented perpendicular to the plane of incidence, (b) The oscillatory part of the even and odd SH fields extracted from (a). The inset shows the corresponding FT spectra. From [59]... 

The surface complexation models used are only qualitatively correct at the molecular level, even though good quantitative description of titration data and adsorption isotherms and surface charge can be obtained by curve fitting techniques. Titration and adsorption experiments are not sensitive to the detailed structure of the interfacial region (Sposito, 1984) but the equilibrium constants given reflect - in a mean field statistical sense - quantitatively the extent of interaction. 

Typical photocurrent transients are shown in Fig. 6 for electrons and in Fig. 7 for holes. The shape of these curves is representative for all transients observed in the study and is characteristic of dispersive transport [64-68]. The carrier mobility p was determined from the inflection point in the double logarithmic plots (cf. Fig. 6b and Fig. 7b) [74]. TOF measurements were performed as a function of carrier type, applied field, and film thickness (Fig. 8). As can be seen from Fig. 8, the drift mobility is independent of L, demonstrating that the photocurrents are not range-limited but indeed reflect the drift of the carrier sheet across the entire sample. Both the independence of the mobility from L, and the fact that the slopes of the tangents used to determine the mobility (Fig. 6 and Fig. 7) do not add to -2 as predicted by the Scher-Montroll theory, indicate that the Scher-Montroll picture of dispersive transients does not adequately describe the transport in amorphous EHO-OPPE [69]. The dispersive nature of the transient is due to the high degree of disorder in the sample and its impact on car-... 

Measured normal incidence reflectances of a-SiC for incident electric field perpendicular to the hexagonal axis are shown in Fig. 9.6 these are unpublished measurements made in the authors laboratory, but they are similar to those pubhshed by Spitzer et al. (1959). Also included in this figure are both sets of optical constants—n, k and e, e"—calculated from the best fit of a one-oscillator model to the experimental data. Note that the model curve is almost a perfect representation of the data over the entire range shown for this solid, the technique of fitting data with a one-oscillator model is both a simple and accurate method for extracting optical constants. 

Figure 1. Various configurations of an optical field for laser-induced electron optics (a) focusing of electrons by the TEM oi mode configuration of the laser field (b) reflection of electrons by the evanescent laser field (c) reflective focusing of electrons by the curved evanescent laser field.

Fig. 41. Two independent measurements of force spectra of the MAC mode SFM at OMCTS-graphite interface. The amplitude of oscillation of the magnetic cantilever driven by an external magnetic field oscillates in both approaching (solid line) and retracting (dotted line) curves in the region of a few nanometers away from the surface due to ordered layers of OM-CTS molecules at the interface. The period of oscillation 8.2 A reflects the dimension ol OMCTS molecules along the direction perpendicular to the layers, a Driving frequency 500 Hz, scan rate 2.8 nm/s. b 200 Hz and 1.6 nm/s. The arrows on the plots correspond to repulsive-force maxima. Reproduced from [183]...

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