Current vs. voltage characteristics

Fig. 9.1. (Left) the architecture of the PEDOT PSS-based OECT is illustrated viewed from the top and at a cross section, respectively. The area of the PEDOT PSS film, in between the source and drain contact, that is capped by the electrolyte, defines the transistor channel. (Right) the current vs. voltage characteristics of the PEDOT PSS-based OECT. At zero gate voltage, the transistor is in the ON state and at Vg = 0.8 V the channel current is suppressed by more than two orders of magnitude as compared to the ON state current...

Figure 16. Forward current vs. voltage characteristics at three different temperatures before and after the BPDA-PDA passivation realization. The current was limited at 1 iirA. The diode P+-emitter diameter and ITE length are 400 pm and 500 pm, respectively. Characterizations were performed in vacuum.

Figure 8.40. Dark current vs. voltage characteristics of an ITO/MEH-PPV/Ceo/Au device at room temperature. (Reproduced by permission of the American Institute of Physics from ref. 60.)...

The current vs. voltage characteristics of test fuel cell at 130, 140 and 150°C using CL-HBP-SA with a SOaff/Ac ratio of 78/18 in mol% as an electrolyte under non-humidified conditions. Dry hydrogen gas and dry oxygen gas were used as fuel and oxidation gas, respectively. Potential scan rate is 20 mV s". ... 

Figure 18. Current vs. voltage characteristics at 77 K. Inset shows the same dependence on a logarithmic scale.

The present work is a report of the properties of polyimide which define functionality as an interlevel dielectric/passivant. Thus, the planarizing and patterning characteristics and electrical characteristics of current vs voltage, dissipation, breakdown field strength, dielectric constant, charge and crossover isolation are discussed in addition to the reliability-related passivation properties. 

Fig. 23. EL characteristics of PPOX-CAR ( ) and PM OX-CAR ( ) with an ITO/poly-mers/Al structure, (a) Current vs. voltage and (b) EL power vs. voltage...

Figure 3.3a Stylised representation of harmonic frequency generation in a varactor multiplier diode. The diode is biased in its working region by a small DC current while held in a waveguide or coaxial structure. The impinging radiation is multiplied in frequency by the non-linear characteristics of the current vs. voltage relationship. The harmonic frequencies are then able to propagate in the waveguide...

Phenomenologically, the ionization current vs. voltage curve produced by different types of radiation in a given liquid can be described by two sections (1) a fast rising portion followed by (2) a linear dependence of the current on voltage. Extrapolation of the linear part to zero current yields an intersection with the voltage axis which is characteristic of the LET of radiation. In Figure 19, examples obtained by Mathieu (1968) are depicted. 

Fig. 15 Current vs. voltage plot for the device. Inset shows the magnified I-V characteristics in the...

Fig. 3 Principle of electrolyte gating. Tuning of the Fermi levels of WEI and WE2 relative to the molecular levels enables measuring of current (0-voltage (E) characteristics i vs ( wei -L we2) at fixed wei or we2, i vs wei or we2 at fixed bias Ebias = ( wei -Ewe2> as well as barrier height profiles i vs distance z of tailored molecular junctions in a vertical SPM-based configuration respective horizontal nanoelectrode assembly...

FIGURE 6.9 Current density vs. bias voltage (a) and luminance vs. current density (b) characteristics of identical devices made on ITO anodes treated under different oxygen plasma conditions. 

Figure 13.14. Drain current vs gate bias voltage characteristics of the pH sensor [17].

Fig. 21 Top normalized electroluminescence spectra for (dotted line) 30, (dashed line) [Pt(C1 ANAN)(C CC6H4Me-4)], and (continuous line) 40 at 4% doping level and multilayer configuration of device. Bottom current density, voltage and luminance characteristics (inset luminescent efficiency vs current density) for OLED using 30 as emitter as 4% doping level (Reproduced with permission from [36a]. Copyright 2002 Royal Society of Chemistry)...

Fig. 6.3. Semiconductor representation for (a) NIN, (b) NIS, and (c) SIS tunnel junctions showing the DOS vs. energy. The expected current/voltage characteristic for each type of junction is included on the right hand side. In each case the Fermi level of metal 1 is raised by e F with respect to metal 2. The dashed lines indicate the characteristics at T>0, and the solid lines indicate the current for T — 0.

Figure 2. Current-voltage characteristic (solid curve) and transmission maxima energies vs. voltage (dashed curves) for the disordered structure with well width fluctuations, <7= 33%.

The simulated current-voltage characteristic (Fig. 8.30) corresponds roughly to the experimentally-determined characteristics for rubrene and tetracene crystals in the non-ohmic range (Fig. 8.27). For the ultrapure tetracene crystals, the values fx 1 cm /Vs for the mobility at room temperature and Nt<5-10 cm , Et 700 meV for the density and the depth of the charge-carrier traps were found [37]. 

Fig. 8.62 Comparison of the simulated current-voltage characteristics for exponential and Gaussian trap distributions, as a log-log plot. The simulations were carried out for temperatures of 100 K, 200 K, and 300 K. The other parameters are ji. = 10 cm /Vs, Sf = A,d= 300 nm, and Nc = 2- 10 cm . The parameters for the trap distributions are given in the figure. From [38].

Current-voltage characteristics of a single filament vs. the magnetic induction, in any direction of the magnetic induction with respect to the axis of the filament. 

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