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Cross-sectional SEM images

Figure 3.21. Cross-sectional SEM image of an In2Te3-coated substrate, with conformal filling of holes. Three iterations of spin-coated In2Te3 deposition were employed. [Pg.102]

Figure 4.6. Cross-sectional SEM images of an A1PO film deposited on Si02 and cured at (a) 275 °C, and (b) flash annealed to 600 °C. [Reproduced with permission. Meyers, S. T. Anderson, J. T. Hong, D. Hung, C. M. Wager, J. F. Keszler, D. A. 2007. Solution processed aluminum oxide phosphate thin-film dielectrics. Chem. Mater. 19 4023-4029. Copyright 2007 American Chemical Society.]... Figure 4.6. Cross-sectional SEM images of an A1PO film deposited on Si02 and cured at (a) 275 °C, and (b) flash annealed to 600 °C. [Reproduced with permission. Meyers, S. T. Anderson, J. T. Hong, D. Hung, C. M. Wager, J. F. Keszler, D. A. 2007. Solution processed aluminum oxide phosphate thin-film dielectrics. Chem. Mater. 19 4023-4029. Copyright 2007 American Chemical Society.]...
Fig. 12.3 Fabrication of the nanocomposite paper units for battery, (a) Schematic of the battery assembled by using nanocomposite film units. The nanocomposite unit comprises LiPF6 electrolyte and multiwalled carbon nanotube (MWNT) embedded inside cellulose paper. A thin extra layer of cellulose covers the top of the MWNT array. Ti/Au thin film deposited on the exposed MWNT acts as a current collector. In the battery, a thin Li electrode film is added onto the nanocomposite, (b) Cross-sectional SEM image of the nanocomposite paper showing MWNT protruding from the cel-lulose-RTIL ([bmlm] [Cl]) thin films (scale bar, 2pm). The schematic displays the partial exposure of MWNT. A supercapacitor is prepared by putting two sheets of nanocomposite paper together at the cellulose exposed side and using the MWNTs on the external surfaces as electrodes, (c) Photographs of the nanocomposite units demonstrating mechanical flexibility. Flat sheet (top), partially rolled (middle), and completely rolled up inside a capillary (bottom) are shown (See Color Plates)... Fig. 12.3 Fabrication of the nanocomposite paper units for battery, (a) Schematic of the battery assembled by using nanocomposite film units. The nanocomposite unit comprises LiPF6 electrolyte and multiwalled carbon nanotube (MWNT) embedded inside cellulose paper. A thin extra layer of cellulose covers the top of the MWNT array. Ti/Au thin film deposited on the exposed MWNT acts as a current collector. In the battery, a thin Li electrode film is added onto the nanocomposite, (b) Cross-sectional SEM image of the nanocomposite paper showing MWNT protruding from the cel-lulose-RTIL ([bmlm] [Cl]) thin films (scale bar, 2pm). The schematic displays the partial exposure of MWNT. A supercapacitor is prepared by putting two sheets of nanocomposite paper together at the cellulose exposed side and using the MWNTs on the external surfaces as electrodes, (c) Photographs of the nanocomposite units demonstrating mechanical flexibility. Flat sheet (top), partially rolled (middle), and completely rolled up inside a capillary (bottom) are shown (See Color Plates)...
Fig. 5.11 (a) Pre-Columbian mask made of ternary alloy (ca. 43% Au, 35% Ag, 21% Cu), courtesy Museu de Arqueologia e Etnografia, USP, Brazil (b) Cross section SEM image and corresponding EDX mapping. The dashed line is the object s contour. Note the strong Cu depletion at distances up to 10-15 im from the surface... [Pg.134]

Fig. 11.2. Cross-section SEM image of boron-doped polycrystalline diamond grown for 8h. Fig. 11.2. Cross-section SEM image of boron-doped polycrystalline diamond grown for 8h.
Figure 4.7 Microscope images and a cross-sectional SEM image of the miniaturized fluorescence detection chip (70 x 12 pm) [58]. Figure 4.7 Microscope images and a cross-sectional SEM image of the miniaturized fluorescence detection chip (70 x 12 pm) [58].
Figure 2. Cross-sectional SEM images of BMI and Kapton coated with Ti02 a) BMI, Method 1, 7 h coating time ( 200 nm) b) BMI, Method 2, 7 h coating time ( 400 nm) c) Kapton , Method 1, 7 h coating time (310 nm) d) Kapton , Method 2, 7 h coating time (416 nm). Figure 2. Cross-sectional SEM images of BMI and Kapton coated with Ti02 a) BMI, Method 1, 7 h coating time ( 200 nm) b) BMI, Method 2, 7 h coating time ( 400 nm) c) Kapton , Method 1, 7 h coating time (310 nm) d) Kapton , Method 2, 7 h coating time (416 nm).
Fig. 1 Cross-section SEM images of free standing photoresist lines (left) and photoresist structures after pattern collapse (right). Fig. 1 Cross-section SEM images of free standing photoresist lines (left) and photoresist structures after pattern collapse (right).
FIGURE 1.1 A cross section SEM image of a representative multilevel interconnect network (from Ref. 9). [Pg.3]

FIGURE 1.16 Cross section SEM image of copper wafer showing overburden Cu with underlying features. The features shown are 50% in metahdielectric density and 2 pm in width (from Ref. 46). [Pg.14]

FIGURE 1.20 Cross section SEM image of a copper interconnect after the removal of overburden copper and before the removal of barrier layer (from Ref. 47). [Pg.16]

Cross-sectional SEM images of type III and type IV pads are shown in Fig. 5.2. Cross-sectional SEM images of all the four types of pads have also been reported in other publications [1]. [Pg.125]

Figure 6.59. Schematic and cross-section SEM image of a layer-by-layer (LbL) approach to deposit iron nanoclusters onto a surface to yield vertically aligned SWNTs. Reproduced with permission from Liu, J. Li, X. Schrand, A. Ohashi, T Dai, L. Chem. Mater. 2005, J 7,6599. Copyright 2005 American Chemical Society. Figure 6.59. Schematic and cross-section SEM image of a layer-by-layer (LbL) approach to deposit iron nanoclusters onto a surface to yield vertically aligned SWNTs. Reproduced with permission from Liu, J. Li, X. Schrand, A. Ohashi, T Dai, L. Chem. Mater. 2005, J 7,6599. Copyright 2005 American Chemical Society.
Figure 7.34. Photograph of a variable-angle SEM sample holder, with an example of a cross-section SEM image (scale bar is 2 pm).fell... Figure 7.34. Photograph of a variable-angle SEM sample holder, with an example of a cross-section SEM image (scale bar is 2 pm).fell...
Cross-sectional SEM image of the PS sample after the 20 min nickel electrodeposition is shown in Fig. 3. The nickel grains does not increase in size as the deposition time increases but new grains arise. A comparison of Figs. 2 and 3 shows that the average grain size is the same for the both cases while their number increases with the deposition time. [Pg.407]

Figure 2. Cross-sectional SEM image of the PS sample after the 10 min nickel electrodeposition. Figure 2. Cross-sectional SEM image of the PS sample after the 10 min nickel electrodeposition.
Figure I, Platinum grain size vs the deposition time and plan and cross-sectional SEM images of platinized porous silicon. Figure I, Platinum grain size vs the deposition time and plan and cross-sectional SEM images of platinized porous silicon.
Figure 9. Cross-sectional SEM images of tapered Ti02 nanotubes obtained by using a time-varying anodization voltage, d and D denote the diameter of apex and cone base, respectively, (a) Nanotubes obtained using a voltage ramp rate of 0.43 V/min from 10 to 23 V and then hold at 23 V for 10 min. (b) Nanotubes obtained by initial anodization at 10 V for 20 min, followed by the linearly increasing voltage at a rate of 1.0 V/min up to 23 V, and finally a constant voltage at 23 V for 2 min [51],... Figure 9. Cross-sectional SEM images of tapered Ti02 nanotubes obtained by using a time-varying anodization voltage, d and D denote the diameter of apex and cone base, respectively, (a) Nanotubes obtained using a voltage ramp rate of 0.43 V/min from 10 to 23 V and then hold at 23 V for 10 min. (b) Nanotubes obtained by initial anodization at 10 V for 20 min, followed by the linearly increasing voltage at a rate of 1.0 V/min up to 23 V, and finally a constant voltage at 23 V for 2 min [51],...
Fig. 9 (A) Schematic illustration of the VLSE process. (B) Tilted SEM image of vertical Si nanowire array grown on a (111) Si wafer. (C) Tilted SEM image of Si nanowire array grown on Si(l 0 0). (From Ref. f) Three of the four equivalent (111) directions are indicated by the white arrows. (D) Cross-sectional SEM images of a 4 im-wide, anisotropically etched trench in a Si(l 1 0) wafer. (E) Au-catalyzed, lateral epitaxial nanowire growth across an 8 tm-wide trench, connecting to opposing sidewall. (From Ref.P f)... Fig. 9 (A) Schematic illustration of the VLSE process. (B) Tilted SEM image of vertical Si nanowire array grown on a (111) Si wafer. (C) Tilted SEM image of Si nanowire array grown on Si(l 0 0). (From Ref. f) Three of the four equivalent (111) directions are indicated by the white arrows. (D) Cross-sectional SEM images of a 4 im-wide, anisotropically etched trench in a Si(l 1 0) wafer. (E) Au-catalyzed, lateral epitaxial nanowire growth across an 8 tm-wide trench, connecting to opposing sidewall. (From Ref.P f)...
Fig. 15.6 Surface and cross-sectional SEM images of capping layer on Cu wiring pattern on Ta/ SiO /Si substrates [24]... Fig. 15.6 Surface and cross-sectional SEM images of capping layer on Cu wiring pattern on Ta/ SiO /Si substrates [24]...
Fig. 15.10 Cross-sectional SEM image of NiB film as barrier layer deposited on the trench patterned SiO substrate... Fig. 15.10 Cross-sectional SEM image of NiB film as barrier layer deposited on the trench patterned SiO substrate...
Fig. 15.21 Cross-sectional SEM image of Cu filled trench patterned substrate fabricated by all-electroless process ... Fig. 15.21 Cross-sectional SEM image of Cu filled trench patterned substrate fabricated by all-electroless process ...
As could already be inferred from the cross-sectional SEM images, the fullerene clusters are in fact surroimded by a polymer-rich skin layer [55,60]. Using Kelvin probe force microscopy Hoppe et al. were able to confirm this by the detection of a considerably increased work function on top of the polymer... [Pg.24]

Figure 1.1 shows a series of cross-sectional SEM images of porous 4H-SiC (n 6 x 1018 cm-3) taken at different depths from about 5 to 55 pm... [Pg.3]

Figure 1.3 Plan view of a (HOO)-oriented porous 4H-SiC sample. Triangles on the surface are about the same size as the triangles seen on cross-sectional SEM images of the vicinal (0001) samples. Reproduced from Y. Shishkin et al., J. Appl. Phys., 96(4), 2311-2322. Copyright (2004), the American Institute of Physics... Figure 1.3 Plan view of a (HOO)-oriented porous 4H-SiC sample. Triangles on the surface are about the same size as the triangles seen on cross-sectional SEM images of the vicinal (0001) samples. Reproduced from Y. Shishkin et al., J. Appl. Phys., 96(4), 2311-2322. Copyright (2004), the American Institute of Physics...

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Cross-sectional Images of Membranes by SEM

SEM images

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