Cross-sectional HRTEM images

Figure 4.15. Cross-section HRTEM images of next-generation MOSFET gates. Reproduced with permission from Intel Corporation (http //www.intel.com).

Figure 7.15 Cross-sectional HRTEM image taken near the GaN/PSC interface, which shows the bridging over a surface opening in the porous substrate (a). It is seen that the growth did not affect the properties of the dense layer, and its structure retained high perfection, (b) shows filling of a micropore-related opening with GaN. Reproduced from M. Mynbaeva et al., J. Cryst. Growth, 303, 472-479. Copyright (2007), with permission from Elsevier...

Figure 2-39. Cross-sectional HRTEM image of an MOCVD-derived YAIO, film on (110) LaAIO,.

Figure 2-41. Cross-sectional HRTEM image of a YBCO/PrGaOi/LaAIOi trilayer showing atomically abrupt interfaces as well as the presence of (fK)l) and (110) growth domains in the PrGaOi layer. The PrGaOi layer was grown by MOCVD and the YBCO layer by PLD.

FIGURE 13.21 Cross section HRTEM image of a surface of FejOa... 

FIGURE 4.2 Cross-sectional HRTEM images showing surfaces of the C face heated at (a) 1250°C, (b) 1300°C, (c) the Si face heated at 1350°C for half an hour, (d) C face, and (e) Si face heated at 1700°C for half an hour. Inset in (d) shows the CNT film observed along a CNT axis plane-view direction. (Adapted and modified from Kusunoki, M. et al.. Philosophical Magazine Letters, 1999.79(4) 153-161 Kusunoki, M. et al.. Applied Physics Letters, 2000. 77(4) 531-533.)... 

Fig. 64. Cross-sectional HRTEM images showing (i) overlap of two twinning variants, (ii) superledge present on the twinning boundary with a height parallel to the substrate/film interface normal, (iii) abruptly ending twin lamella bounded by S3 111 boundaries and (iv) vertical E3 111 twin boundaries in a YH2 domaincontaining horizontal...

Figure 4.8 Cross-sectional HRTEM image of 2H-AlN/6H-SiC (1120) interface.

Figure 11.23 Cross-section HRTEM image along the [1100]caN zone axis ...

Fig. 7.7. TEM images and SAD patterns (insets) of a poly crystalline ZnO film on silicon (111) PLD grown at 1 x 10 3mbar O2 and about 540°C (a) Bright field Si(lll) plane view observation, grain size is about 70 nm, (b) cross-section HRTEM lattice image with intermediate SiO layer, and (c) weak beam Si(110) TEM cross-section. The area from which the SAD patterns were taken are within the white circles. Reprinted with permission from [49]...

Fig. 9 (A) Typical HRTEM image of SWNT (insert is a cross-sectional TEM image). (B) Typical HRTEM image of DWNTs (insert is a cross-sectional TEM image). (C) Raman spectra of SWNT. (D) Raman spectra of DWNTs. Note that the bent nanotube is passed through the image [see inserts in (A) and (B)].

Figure 11 (a) [13] shows the cross section of HRTEM image of the tested specimen. Amorphous silicon area occurs... 

Figure 3 c. HRTEM image of a cross-section of a carbon fiber after propylene pyrolysis the black line represents the boarder between the lamellar pyrocarbon (at the top) and the microporous fiber (at the bottom). 

Figure 6. Sketch of the cross-section of a carbon fiber coated by pyrocarbon, taking into account the HRTEM image analysis data.

Figure 11. The HRTEM micrograph of VO2 4.(C16H33NH2)0.34 nanotubes (a rolled up superlattice of V205 layers separated by amphiphilic moities with amine head group) (39). (a) Side-on view of three nanotubes with unclosed caps and (b) cross-section of the nanotubes left zero-loss (electron energy) image, right vanadium (electron energy loss) image. [Courtesy of F. Krumeich and R. Nesper, ETH.]...

Fig. 7.8. TEM cross-section of an undoped PLD ZnO thin film on 3C-SiC buffered Si(lll), grown at 0.016mbar O2 and 620°C. The SAD pattern (inset) was taken from the circled area. The HRTEM image (right) of the interface shows residual 3C-SiC and an amorphous interface layer. Images by G. Wagner, Leipzig...

Figure 4.14. Cross-section high-resolution transmission electron microscopy (HRTEM) images of gate oxides for MOSFETs. Provided is an illustration of film thicknesses that result in identical capacitance for Si02( = 3.8), relative to a high- c dielectric k = 23.9) gate oxide. Hence, increased gate capacitance will result from thinner films comprising high- c dielectric materials. Reproduced with permission from Intel Corporation (http //www.intel.com).

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