Covalent bonds crystals

In covalently bonded crystals, the forces needed to shear atoms are localized and are large compared with metals. Therefore, dislocation motion is intrinsically constrained in them. 

The theory just presented shows how the behavior of electrons leads to bonding in the ground state of a molecule. When dislocations move to produce plastic deformation and hardness indentations, they disrupt such bonds in covalently bonded crystals. Thus bonds become anti-bonds (excited states). This requires that the idea of a hierarchy of states that is observed for atoms be extended to molecules. 

It is shown that the stabilities of solids can be related to Parr s physical hardness parameter for solids, and that this is proportional to Pearson s chemical hardness parameter for molecules. For sp-bonded metals, the bulk moduli correlate with the chemical hardness density (CffD), and for covalently bonded crystals, the octahedral shear moduli correlate with CHD. By analogy with molecules, the chemical hardness is related to the gap in the spectrum of bonding energies. This is verified for the Group IV elements and the isoelec-tronic III-V compounds. Since polarization requires excitation of the valence electrons, polarizability is related to band-gaps, and thence to chemical hardness and elastic moduli. Another measure of stability is indentation hardness, and it is shown that this correlates linearly with reciprocal polarizability. Finally, it is shown that theoretical values of critical transformation pressures correlate linearly with indentation hardness numbers, so the latter are a good measure of phase stability. 

Table 11.17 Typical Values of e2Qq (MHz) for Halogen Nuclei in Covalently Bonded Crystals [55]...

The effect is small, but all atoms have a small amount of diamagnetism. This includes atoms in gases and liquids, atoms in van der Waals bonded ciystals, ions in ionic salts, ion cores in metals, inner core electrons in covalently bonded crystals, and in molecules of living systems. 

In most covalent compounds, the strong covalent bonds link the atoms together into molecules, but the molecules themselves are held together by much weaker forces, hence the low melting points of molecular crystals and their inability to conduct electricity. These weak intermolecular forces are called van der WaaFs forces in general, they increase with increase in size of the molecule. Only... 

Theoretical studies of diffusion aim to predict the distribution profile of an exposed substrate given the known process parameters of concentration, temperature, crystal orientation, dopant properties, etc. On an atomic level, diffusion of a dopant in a siUcon crystal is caused by the movement of the introduced element that is allowed by the available vacancies or defects in the crystal. Both host atoms and impurity atoms can enter vacancies. Movement of a host atom from one lattice site to a vacancy is called self-diffusion. The same movement by a dopant is called impurity diffusion. If an atom does not form a covalent bond with siUcon, the atom can occupy in interstitial site and then subsequently displace a lattice-site atom. This latter movement is beheved to be the dominant mechanism for diffusion of the common dopant atoms, P, B, As, and Sb (26). 

When a sibcon crystal is doped with atoms of elements having a valence of less than four, eg, boron or gallium (valence = 3), only three of the four covalent bonds of the adjacent sibcon atoms are occupied. The vacancy at an unoccupied covalent bond constitutes a hole. Dopants that contribute holes, which in turn act like positive charge carriers, are acceptor dopants and the resulting crystal is -type (positive) sibcon (Fig. Id). 

---