Conduction band discontinuity

Valcncc-band and conduction-band discontinuities for S-S licterojunctions, in cV,... 

Fig. 5.10. Fully NEA GaAs/(CsO) according to the heterojunction model. For the optimum (CsO) thickness, the work function of (CsO) is 1.08 eV, which gives a bulk GaAs electron affinity of-0.34 eV. The conduction band discontinuity, common in most coated IIl-V surfaces, is hidden for the 111 B face of GaAs. Note the slight (0.1 eV) band bending, indicating that Ess differs from its value on pure Cs-coated material. The Fermi level at the surface varies also with the choice of activated crystal face [5.46]...

The linear augmented plane-wave method has been used to study the electronic structure and band edge discontinuities at the (110) interface of diamond and p-BN. By studying N-layer/N-layer C/BN (110) superlattices with N = 1.3 and 5 it has been shown that three layers of each material are sufficient to give a central layer which has a core-level position nearly representative of the bulk. Resultant data are valence band discontinuity=1.42 0.04 eV, which, by using the experimental band gaps (5.5 eV for diamond, 6.2 eV for p-BN), leads to a conduction band discontinuity of 0.7 eV. The lowest conduction band at the interface is the X-point band in boron nitride for a detailed discussion, see [9]. 

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