Compensated insulating layer

This section is organized as follows. The construction of the IPMC-PVDF structure and the sensing circuit are presented in Section 8.2.1. Mechanical analysis is conducted to understand the stiffening effect introduced by the PVDF and insulating layers, as shown in Section 8.2.2. The compensation scheme for the feedthrough coupling effect is then discussed in Section 8.2.3. 

Heating was provided by two heating tapes one for the preheater and the other for the reactor to compensate for thermal losses from the windows. The gas phase temperature was controlled by manual adjustment of the input voltage to the heating tapes. Thermal Insulation was provided by l"-thick layer of Fiberfrax (The Carborundum Co.). 

Miyahara et al. (1985) developed an integrated enzyme FET based on a silicon-on-sapphire (SOS) sensor for simultaneous determination of glucose and urea. Three ISFETs and two metal insulator semiconductor FETs (MISFETs) were integrated on a surface area of 2.5 mm x 2.5 mm (Fig. 54). One of the ISFETs served as reference sensor in order to compensate the signals caused by pH changes of the solution the two others were covered by GOD and urease, respectively. The MISFETs can be used as pH electrodes. For enzyme immobilization the chip was covered with a laminated photosensitive layer of 75 pm thickness and,... 

The thickness of the adhesive layers can be adjusted over a wide range from 5 to 15 mm. Any tolerance problems inherent in the assembling of large-scale metallic and composite components can be easily compensated. Due to the excellent insulation behavior of the PU adhesives, heat flow between the adher-ends can be minimized (i.e., by thermal decoupling). Additionally, elastic adhesives provide outstanding mechanical damping characteristics and help to reduce local vibrations. 

With He — 550 gauss, the critical current calculated from (11) of the corresponding infinitely long ideal two-layer solenoid is 37.5 amp. The differences to the observed 34 amp can be easily explained by the circular wire cross section, the insulation separation between adjacent turns, and the fact that no end compensation was used. It is remarkable that the critical current of 69 amp of the outside layer was so little affected by the heat production of the inner layer at that current level. 

Figure 8 SNMS depth profile of an insulating oxidic layer structure (65nm TiOa/SOnm Si02/65nm Ti02/float glass). Analysis with charge compensated external bombardment mode with 5keV Kr+.

X 2mm lateral size with an active heated area of 50 x 100 [xm with a thin-film heater and a thin-film thermopile arranged around the active area and electrically insulated with a thin layer of Si02- The thermopile hot junctions have a distance of 50 pm to the active center the measured temperature difference is therefore not directly that of the active area (with sample) and the surroundings (thermostat), but this disadvantage could be compensated by proper calibration (Adamovsky, Minakov, and Schick, 2003). 

---