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CMP to Correct Defects

Planarize various materials Planarize multimaterial surfaces [Pg.20]

Improved metal step coverage Increased IC reliability Reduce defects No hazardous gases [Pg.20]

Useful for planarizing multiple materials during the same polish step [Pg.20]

Reduces severe topography to allow fabrication with tighter design rules an additional interconnection levels [Pg.20]

Provides an alternative means of patterning metal, eliminating the need to plasma etch, difficult to etch metals and alloys [Pg.20]

See other pages where CMP to Correct Defects is mentioned: [Pg.19] [Pg.19]

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Defect corrections