CMP for Via-First 3D Using Redistribution Layer Bonding

FIGURE 15.15 (a) Layout of dice and profilometry scans over a 200-mm wafer for wafer-level height distribution study, (b) Wafer-level height distribution for CMP over a nonideal die layout (four of the ten scan lines have been removed for clarity) (from Ref 114). 

TABLE 15.2 Summary of Planarization Requirements for Processing Steps Required to Form Both the Bond and the Interwafer Interconnect for Various Wafer-Level 3D Integration Technology Platforms. 

Bonding Challenging Good Best Good to challenging 

Discuss the fundamental mechanism for oxide-to-oxide bonding, copper-to-copper bonding, and adhesive bonding. 

Compare the advantages of die stacking to the advantages gained by wafer-level 3D. 

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