Chemical identification, summary table

The physical techniques used in IC analysis all employ some type of primary analytical beam to irradiate a substrate and interact with the substrate s physical or chemical properties, producing a secondary effect that is measured and interpreted. The three most commonly used analytical beams are electron, ion, and photon x-ray beams. Each combination of primary irradiation and secondary effect defines a specific analytical technique. The IC substrate properties that are most frequendy analyzed include size, elemental and compositional identification, topology, morphology, lateral and depth resolution of surface features or implantation profiles, and film thickness and conformance. A summary of commonly used analytical techniques for VLSI technology can be found in Table 3. 

Table 8. Summary of strengths and weaknesses of designated laboratories in the identification of Scheduled chemicals...

Simulations in the Diffusion-Limited Regime p = 10. None of the profiles listed in Table 23-9 is more effective than uniform deposition at any aspect ratio when the Damkohler number p = 10. This is understandable in the diffusion-controlled regime where the rate of chemical reaction on the catalytic surface is not the primary factor that governs the conversion of reactants to products. However, some profiles perform poorly relative to uniform deposition when diffusion of reactants toward the active surface is slow. Differences among the profiles are more pronounced at higher aspect ratios. A qualitative summary at each aspect ratio is provided in Table 23-10. Identification numbers are underlined when... 

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