Charging and Discharging a Capacitor

When charging a capacitor, with a capacitance C and an internal resistance R, by connecting it to a direct-current power supply of voltage E, at each instant the current that flows in the circuit is given by  

At the beginning, an important current flows but decreases exponentially until the voltage of the capacitor reaches that of the power supply, at which point the electrical charge is close to CE. 

When discharging a capacitor of capacitance C into a resistance R, the current intensity as a function of time is given by  

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Table 8.1. Charging and discharging a capacitor Quantity Charging Discharging...

Next I m planning to build a system where I continuously charge and discharge a tOOuF capacitor through the spark plug at about 50Hz frequency. 

Another possibility is based on the fact that constant-phase elements represent processes that are not purely conservative (charging and discharging of a capacitor is a conservative process), first because of the fact that n is not equal to 1. From such an element, one can isolate the conservative contribution, which can then be further treated as a conservative process and simulated by a pure capacitor. The starting point for this separation is the existence of an angle frequency, to, for which48 ... 

By contrast, a battery-like electrode is characterized by an almost constant potential during charging and discharging. Thus, in order to get the largest cell voltage in an asymmetric capacitor, where the capacitive electrode is replaced by a battery-like one, the selected battery-electrode potential must be close to the low or high limit of the potential window. 

DRAM (dynamic random access memory) — A type of a commonly used random access memory that allows the stored data to be accessed in any order, i.e., at random, not just in sequence. That type of computer memory stores each bit of data in a separate capacitor charged and discharged by only one logic element transistor. However, the DRAM capacitors are not ideal and hence leak electrons the information eventually fades unless the capacitor charge is periodically refreshed (circa every 64 ms). This makes this type of memory more power... 

The dynamic random access memory (DRAM) device, a two-element circuit, was invented by Dennard in 1967. The DRAM cell contains one MOSFET and one charge-storage capacitor. The MOSFET functions as a switch to charge or discharge the capacitor. Although a DRAM is volatile and consumes relatively high power, it is expected that DRAMs will continue to be the semiconductor memory of choice for nonportable electronic systems in the foreseeable future. ... 

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