Carrier indium compounds

Table. 1-88 Carrier concentrations n-, and electrical conductivity a of indium compounds...

Table4.1-80 Phonon wavenumbers of indium compounds. Indium nitride (InN), T — 300 K indium phosphide (InP), RT, from coherent inelastic neutron scattering, carrier concentration n = 10 cm indium arsenide (InAs), from Raman scattering indium antimonide (InSb), T — 300 K, from inelastic neutron scattering, carrier concentration n =...

Imura and Suzuki36 have prepared labelled organotin compounds from artificial tin isotopes produced in a cyclotron. The carrier-free tin-113 radioisotope was produced by irradiating indium-115 oxide with 40-MeV protons (equation 33). 

The mobility and resistivity data of single crystalline zinc oxide samples (measured at room temperature) from different authors, which were reported from 1957 to 2005, are displayed in Fig. 2.6 as a function of the carrier concentration (part of these data were taken from [67]). Undoped ZnO crystals exhibit carrier concentrations as low as 1015 cm-3, while indium-doped crystals reach carrier concentrations up to 7 x 1019cm-3. The mobility data show a large scattering between carrier concentrations of 1017 to 5 x 1018cm-3. This is caused by the fact that zinc oxide is a compound semiconductor that is not as well developed as other semiconducting compounds. For instance, only... 

There have been many papers In recent years dealing with the magnetic properties of semiconductors. Such studies are of particular Importance when discussing the band structure and chemical bonding in semiconducting compounds. Indium antimonide and arsenide have been thoroughly studied in this respect ([1-3], etc.). It is of interest to study the solid solutions based on these compounds and, in particular, to examine the nature of the relationship between the susceptibility of the solid solutions and their composition, temperature, and carrier density. 

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