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Capacitance bulk

As an example, we look at tire etching of silicon in a CF plasma in more detail. Flat Si wafers are typically etched using quasi-one-dimensional homogeneous capacitively or inductively coupled RF-plasmas. The important process in tire bulk plasma is tire fonnation of fluorine atoms in collisions of CF molecules witli tire plasma electrons... [Pg.2805]

Fig. 5. NMOS capacitance voltage characteristics where C is the oxide capacitance, A shows low frequency characteristics, and B shows high frequency characteristics. At low frequencies C approaches C for negative voltages (accumulation) and positive voltages (inversion). In the flat-band (FB) condition there is no voltage difference between the semiconductor s surface and bulk. The threshold voltage, Dp for channel formation is the point where the... Fig. 5. NMOS capacitance voltage characteristics where C is the oxide capacitance, A shows low frequency characteristics, and B shows high frequency characteristics. At low frequencies C approaches C for negative voltages (accumulation) and positive voltages (inversion). In the flat-band (FB) condition there is no voltage difference between the semiconductor s surface and bulk. The threshold voltage, Dp for channel formation is the point where the...
Simple considerations show that the membrane potential cannot be treated with computer simulations, and continuum electrostatic methods may constimte the only practical approach to address such questions. The capacitance of a typical lipid membrane is on the order of 1 j.F/cm-, which corresponds to a thickness of approximately 25 A and a dielectric constant of 2 for the hydrophobic core of a bilayer. In the presence of a membrane potential the bulk solution remains electrically neutral and a small charge imbalance is distributed in the neighborhood of the interfaces. The membrane potential arises from... [Pg.143]

A key factor in the suitabihty of cokes for graphite production is their isotropy as determined by the coefficient of thermal expansion. After the calcined coke was manufactured into graphite, the axial CTE values of the graphite test bars were determined using a capacitance bridge method over a temperature range of 25 to 100°C. The results are summarized in Table 24. Also included in the table are bulk density measurement of calcined cokes and the resistivity values of their graphites. [Pg.230]

Schematic energy level diagrams of a metal/polymer/metal structure before and after the layers are in contact are shown in the top two drawings of Figure 11-6. Before contact, the metals and the polymer have relative energies determined by the metal work functions and the electron affinity and ionization potential of the polymer. After contact there is a built-in electric field in the structure due to the different Schottky energy barriers of the asymmetric metal contacts. Capacitance-voltage measurements demonstrate that the metal/polymer/metal structures are fully depleted and therefore the electric field is constant throughout the bulk of the structure [31, 35]. The built-in potential, Vhh i.e. the product of the constant built-in electric field and the layer thickness may be written... Schematic energy level diagrams of a metal/polymer/metal structure before and after the layers are in contact are shown in the top two drawings of Figure 11-6. Before contact, the metals and the polymer have relative energies determined by the metal work functions and the electron affinity and ionization potential of the polymer. After contact there is a built-in electric field in the structure due to the different Schottky energy barriers of the asymmetric metal contacts. Capacitance-voltage measurements demonstrate that the metal/polymer/metal structures are fully depleted and therefore the electric field is constant throughout the bulk of the structure [31, 35]. The built-in potential, Vhh i.e. the product of the constant built-in electric field and the layer thickness may be written...
In the second group of models, the pc surface consists only of very small crystallites with a linear parameter y, whose sizes are comparable with the electrical double-layer parameters, i.e., with the effective Debye screening length in the bulk of the diffuse layer near the face j.262,263 In the case of such electrodes, inner layers at different monocrystalline areas are considered to be independent, but the diffuse layer is common for the entire surface of a pc electrode and depends on the average charge density <7pc = R ZjOjOj [Fig. 10(b)]. The capacitance Cj al is obtained by the equation... [Pg.50]

Following the concepts of H. Helmholtz (1853), the EDL has a rigid structnre, and all excess charges on the solntion side are packed against the interface. Thus, the EDL is likened to a capacitor with plates separated by a distance 5, which is that of the closest approach of an ion s center to the surface. The EDL capacitance depends on 5 and on the value of the dielectric constant s for the medium between the plates. Adopting a value of 5 of 10 to 20 nm and a value of s = 4.5 (the water molecules in the layer between the plates are oriented, and the value of e is much lower than that in the bulk solution), we obtain C = 20 to 40 jjE/cm, which corresponds to the values observed. However, this model has a defect, in that the values of capacitance calculated depend neither on concentration nor on potential, which is at variance with experience (the model disregards thermal motion of the ions). [Pg.151]

Although it was elear that separation of an interface into surface and bulk components as in Eq, (19) is artifieial and must disappear in a consistent microscopic analysis, electronic effects were initially diseussed in terms of a compact layer and its capacitance C, It was apparent early on that the eleetrons strongly influence double layer properties [28-33],... [Pg.78]

A little later, after we have better understood the current waveforms in the input capacitors, we will do a calculation to correctly compute the amount of bulk capacitance based on the 1% input ripple criterion mentioned above. [Pg.66]

In Figure 2-10, we Anally break up the input capacitance into a high-frequency capacitor and a relaAvely low-frequency bulk capacitor. The current distribuAons are shown, as well as how they all add up eventually. The mystery is clear now, and in the process we also understand how the decoupling capacitors are supposed to behave. Now we can also start to understand how this delicate balance can be easily shattered by lack of proper decoupling ... [Pg.69]

Lack of Bulk Capacitance and/or Too Much ESR Can Play Havoc... [Pg.71]


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See also in sourсe #XX -- [ Pg.14 , Pg.99 , Pg.204 ]




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