Brief Survey of Defects

The topic of defects in semiconductors encompasses point, line, planar and volume defects. Point defects include those defects occupying, or sharing, a single lattice site these would include substitutional impurities 

Much less is known about defects in III-Vs and we will cover that topic with the discussion of the interaction of hydrogen defects that follows. 

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Some of the transition metal-oxide systems have become a subject of intensive research in the last two decades. The relation between the parabolic oxidation kinetics and the predominating point defect in the oxide was verified. To discuss the high-temperature oxidation mechanism of non-noble metals it is appropriate to start with a brief survey of some of the literature on the point defect dependent properties of, for example, nickel oxide. 

There are many types of defects originated from the layered structure of the smectic A phase. Here, we shall only present a brief survey of the most important cases. 

The complex phase diagrams and rich crystal chemistry of the transition metal-containing oxide systems, and great diversity in the defect chemistry and transport properties of mixed-conducting materials known in these systems, make it impossible to systematize all promising compositions in a brief survey. The primary attention here is therefore centered on the comparison of major families of the oxide mixed conductors used for dense ceramic membranes and porous electrodes of SOFCs and other high-temperature electrochemical devices. 

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