Bonding surface reconstruction

Poisoning is caused by chemisorption of compounds in the process stream these compounds block or modify active sites on the catalyst. The poison may cause changes in the surface morphology of the catalyst, either by surface reconstruction or surface relaxation, or may modify the bond between the metal catalyst and the support. The toxicity of a poison (P) depends upon the enthalpy of adsorption for the poison, and the free energy for the adsorption process, which controls the equilibrium constant for chemisorption of the poison (KP). The fraction of sites blocked by a reversibly adsorbed poison (0P) can be calculated using a Langmuir isotherm (equation 8.4-23a) ... 

A set of simple physical and chemical principles can be used to understand and predict the surface reconstruction or faceting, which occurs on oxide surfaces.8,9 These include (1) autocompensation of stable surfaces, (2) rehybridization of the dangling bond charge density, (3) formation of an insulating surface, (4) conservation of near-neighbor bond lengths (which minimize the formation of surface strain fields), and (5) surface kinetic factors. We shall briefly discuss all of these factors governing the surface reconstruction of metal oxide. 

Once a particular surface structure has been determined to be stable (i.e., autocompensated), the primary factor determining the nature of the surface reconstruction is the energy that can be gained by rehybridizing the surface dangling bond charge density in response to the reduced coordination at the surface. As a consequence, a charge transfer between the atoms at the surface takes place and this results in the formation of new bonds between surface atoms adsorbed to the surface (also known as adatoms). The formation of new bonds on the surface leads to different chemical and physical properties at the surface.11... 

Besides metallic crystals, covalent crystals also imdergo surface reconstruction as mentioned in Sec. 2.7 and dangling surface atoms reduce the number of their dangling bonds to stabilize the surface energy, thereby forming a reconstructed surface lattice different from the interior lattice. 

Fig. 1.11. The nascent Si(lll) surface and its reconstruction, (a) The nascent Si(lll) surface has a threefold symmetry, with nearest-neighbor atomic di.stance 3.84 A. (b) The Si( 111) surface reconstructs immediately at room temperature to a metastable Si(lll)-2XI surface, which has a lower symmetry. Two rows of dangling bond states are formed One is filled, another is empty.

The first successful first-principle theoretical studies of the electronic structure of solid surfaces were conducted by Appelbaum and Hamann on Na (1972) and A1 (1973). Within a few years, first-principles calculations for a number of important materials, from nearly free-electron metals to f-band metals and semiconductors, were published, as summarized in the first review article by Appelbaum and Hamann (1976). Extensive reviews of the first-principles calculations for metal surfaces (Inglesfeld, 1982) and semiconductors (Lieske, 1984) are published. A current interest is the reconstruction of surfaces. Because of the refinement of the calculation of total energy of surfaces, tiny differences of the energies of different reconstructions can be assessed accurately. As examples, there are the study of bonding and reconstruction of the W(OOl) surface by Singh and Krakauer (1988), and the study of the surface reconstruction of Ag(llO) by Fu and Ho (1989). 

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